Growth of relaxed GeSn film with high Sn content via Sn component-grade buffer layer structure
文献类型：期刊论文
| 作者 | Liu, Xiangquan; Zheng, Jun; Li, Mingming; Wan, Fengshuo; Niu, Chaoqun; Liu, Zhi; Zuo, Yuhua; Xue, Chunlai; Cheng, Buwen |
| 刊名 | JOURNAL OF PHYSICS D-APPLIED PHYSICS
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| 出版日期 | 2021 |
| 卷号 | 54期号:43页码:435101 |
| 公开日期 | 2021 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/30883]  |
| 专题 | 半导体研究所_光电子研究发展中心 |
| 推荐引用方式 GB/T 7714 | Liu, Xiangquan; Zheng, Jun; Li, Mingming; Wan, Fengshuo; Niu, Chaoqun; Liu, Zhi; Zuo, Yuhua; Xue, Chunlai; Cheng, Buwen. Growth of relaxed GeSn film with high Sn content via Sn component-grade buffer layer structure[J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS,2021,54(43):435101. |
| APA | Liu, Xiangquan; Zheng, Jun; Li, Mingming; Wan, Fengshuo; Niu, Chaoqun; Liu, Zhi; Zuo, Yuhua; Xue, Chunlai; Cheng, Buwen.(2021).Growth of relaxed GeSn film with high Sn content via Sn component-grade buffer layer structure.JOURNAL OF PHYSICS D-APPLIED PHYSICS,54(43),435101. |
| MLA | Liu, Xiangquan; Zheng, Jun; Li, Mingming; Wan, Fengshuo; Niu, Chaoqun; Liu, Zhi; Zuo, Yuhua; Xue, Chunlai; Cheng, Buwen."Growth of relaxed GeSn film with high Sn content via Sn component-grade buffer layer structure".JOURNAL OF PHYSICS D-APPLIED PHYSICS 54.43(2021):435101. |
入库方式： OAI收割
来源：半导体研究所
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