The Atomic Rearrangement of GaN-Based Multiple Quantum Wells in H-2/NH3 Mixed Gas for Improving Structural and Optical Properties
文献类型：期刊论文
| 作者 | Ben, Yuhao; Liang, Feng; Zhao, Degang; Yang, Jing; Liu, Zongshun; Chen, Ping |
| 刊名 | NANOSCALE RESEARCH LETTERS
 |
| 出版日期 | 2021 |
| 卷号 | 16期号:1页码:161 |
| 公开日期 | 2021 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/30812]  |
| 专题 | 半导体研究所_光电子研究发展中心 |
| 推荐引用方式 GB/T 7714 | Ben, Yuhao; Liang, Feng; Zhao, Degang; Yang, Jing; Liu, Zongshun; Chen, Ping. The Atomic Rearrangement of GaN-Based Multiple Quantum Wells in H-2/NH3 Mixed Gas for Improving Structural and Optical Properties[J]. NANOSCALE RESEARCH LETTERS,2021,16(1):161. |
| APA | Ben, Yuhao; Liang, Feng; Zhao, Degang; Yang, Jing; Liu, Zongshun; Chen, Ping.(2021).The Atomic Rearrangement of GaN-Based Multiple Quantum Wells in H-2/NH3 Mixed Gas for Improving Structural and Optical Properties.NANOSCALE RESEARCH LETTERS,16(1),161. |
| MLA | Ben, Yuhao; Liang, Feng; Zhao, Degang; Yang, Jing; Liu, Zongshun; Chen, Ping."The Atomic Rearrangement of GaN-Based Multiple Quantum Wells in H-2/NH3 Mixed Gas for Improving Structural and Optical Properties".NANOSCALE RESEARCH LETTERS 16.1(2021):161. |
入库方式： OAI收割
来源：半导体研究所
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