Realization of 366 nm GaN/AlGaN single quantum well ultraviolet laser diodes with a reduction of carrier loss in the waveguide layers
文献类型：期刊论文
| 作者 | Yang, J.; Wang, B. B.; Zhao, D. G.; Liu, Z. S.; Liang, F.; Chen, P.; Zhang, Y. H.; Zhang, Z. Z. |
| 刊名 | JOURNAL OF APPLIED PHYSICS
 |
| 出版日期 | 2021 |
| 卷号 | 130期号:17页码:173105 |
| 公开日期 | 2021 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/30811]  |
| 专题 | 半导体研究所_光电子研究发展中心 |
| 推荐引用方式 GB/T 7714 | Yang, J.; Wang, B. B.; Zhao, D. G.; Liu, Z. S.; Liang, F.; Chen, P.; Zhang, Y. H.; Zhang, Z. Z.. Realization of 366 nm GaN/AlGaN single quantum well ultraviolet laser diodes with a reduction of carrier loss in the waveguide layers[J]. JOURNAL OF APPLIED PHYSICS,2021,130(17):173105. |
| APA | Yang, J.; Wang, B. B.; Zhao, D. G.; Liu, Z. S.; Liang, F.; Chen, P.; Zhang, Y. H.; Zhang, Z. Z..(2021).Realization of 366 nm GaN/AlGaN single quantum well ultraviolet laser diodes with a reduction of carrier loss in the waveguide layers.JOURNAL OF APPLIED PHYSICS,130(17),173105. |
| MLA | Yang, J.; Wang, B. B.; Zhao, D. G.; Liu, Z. S.; Liang, F.; Chen, P.; Zhang, Y. H.; Zhang, Z. Z.."Realization of 366 nm GaN/AlGaN single quantum well ultraviolet laser diodes with a reduction of carrier loss in the waveguide layers".JOURNAL OF APPLIED PHYSICS 130.17(2021):173105. |
入库方式： OAI收割
来源：半导体研究所
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