The influence of residual GaN on two-step-grown GaN on sapphire
文献类型：期刊论文
| 作者 | Peng, Liyuan; Liu, Shuangtao; Yang, Jing; Zhao, Degang; Liang, Feng; Chen, Ping; Liu, Zongshun |
| 刊名 | MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
 |
| 出版日期 | 2021 |
| 期号 | 135页码:105903 |
| 公开日期 | 2021 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/30797]  |
| 专题 | 半导体研究所_光电子研究发展中心 |
| 推荐引用方式 GB/T 7714 | Peng, Liyuan; Liu, Shuangtao; Yang, Jing; Zhao, Degang; Liang, Feng; Chen, Ping; Liu, Zongshun. The influence of residual GaN on two-step-grown GaN on sapphire[J]. MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING,2021(135):105903. |
| APA | Peng, Liyuan; Liu, Shuangtao; Yang, Jing; Zhao, Degang; Liang, Feng; Chen, Ping; Liu, Zongshun.(2021).The influence of residual GaN on two-step-grown GaN on sapphire.MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING(135),105903. |
| MLA | Peng, Liyuan; Liu, Shuangtao; Yang, Jing; Zhao, Degang; Liang, Feng; Chen, Ping; Liu, Zongshun."The influence of residual GaN on two-step-grown GaN on sapphire".MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING .135(2021):105903. |
入库方式： OAI收割
来源：半导体研究所
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