Influences of gallium and nitrogen partial pressure on step-bunching and step-meandering morphology of InGaN quantum barrier layer
文献类型：期刊论文
| 作者 | Peng, Liyuan; Zhao, Degang; Liang, Feng; Wang, Wenjie; Liu, Zongshun; Chen, Ping; Yang, Jing |
| 刊名 | MATERIALS TODAY COMMUNICATIONS
 |
| 出版日期 | 2021 |
| 卷号 | 29页码:102923 |
| 公开日期 | 2021 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/30762]  |
| 专题 | 半导体研究所_光电子研究发展中心 |
| 推荐引用方式 GB/T 7714 | Peng, Liyuan; Zhao, Degang; Liang, Feng; Wang, Wenjie; Liu, Zongshun; Chen, Ping; Yang, Jing. Influences of gallium and nitrogen partial pressure on step-bunching and step-meandering morphology of InGaN quantum barrier layer[J]. MATERIALS TODAY COMMUNICATIONS,2021,29:102923. |
| APA | Peng, Liyuan; Zhao, Degang; Liang, Feng; Wang, Wenjie; Liu, Zongshun; Chen, Ping; Yang, Jing.(2021).Influences of gallium and nitrogen partial pressure on step-bunching and step-meandering morphology of InGaN quantum barrier layer.MATERIALS TODAY COMMUNICATIONS,29,102923. |
| MLA | Peng, Liyuan; Zhao, Degang; Liang, Feng; Wang, Wenjie; Liu, Zongshun; Chen, Ping; Yang, Jing."Influences of gallium and nitrogen partial pressure on step-bunching and step-meandering morphology of InGaN quantum barrier layer".MATERIALS TODAY COMMUNICATIONS 29(2021):102923. |
入库方式： OAI收割
来源：半导体研究所
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