Improvement of interface morphology and luminescence properties of InGaN/GaN multiple quantum wells by thermal annealing treatment
文献类型:期刊论文
作者 | Hou, Yufei; Liang, Feng; Zhao, Degang; Liu, Zongshun; Chen, Ping; Yang, Jing |
刊名 | RESULTS IN PHYSICS
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出版日期 | 2021 |
卷号 | 31页码:105057 |
公开日期 | 2021 |
源URL | [http://ir.semi.ac.cn/handle/172111/30750] ![]() |
专题 | 半导体研究所_光电子研究发展中心 |
推荐引用方式 GB/T 7714 | Hou, Yufei; Liang, Feng; Zhao, Degang; Liu, Zongshun; Chen, Ping; Yang, Jing. Improvement of interface morphology and luminescence properties of InGaN/GaN multiple quantum wells by thermal annealing treatment[J]. RESULTS IN PHYSICS,2021,31:105057. |
APA | Hou, Yufei; Liang, Feng; Zhao, Degang; Liu, Zongshun; Chen, Ping; Yang, Jing.(2021).Improvement of interface morphology and luminescence properties of InGaN/GaN multiple quantum wells by thermal annealing treatment.RESULTS IN PHYSICS,31,105057. |
MLA | Hou, Yufei; Liang, Feng; Zhao, Degang; Liu, Zongshun; Chen, Ping; Yang, Jing."Improvement of interface morphology and luminescence properties of InGaN/GaN multiple quantum wells by thermal annealing treatment".RESULTS IN PHYSICS 31(2021):105057. |
入库方式: OAI收割
来源:半导体研究所
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