Tuning the High-Efficiency Field-Free Current-Induced Deterministic Switching via Ultrathin PtMo Layer with Mo Content
文献类型：期刊论文
| 作者 | Bekele, Zelalem Abebe; Li, Runze; Li, Yucai; Cao, Yi; Liu, Xionghua; Wang, Kaiyou |
| 刊名 | ADVANCED ELECTRONIC MATERIALS
 |
| 出版日期 | 2021 |
| 卷号 | 7期号:12页码:2100528 |
| 公开日期 | 2021 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/30789]  |
| 专题 | 半导体研究所_半导体超晶格国家重点实验室 |
| 推荐引用方式 GB/T 7714 | Bekele, Zelalem Abebe; Li, Runze; Li, Yucai; Cao, Yi; Liu, Xionghua; Wang, Kaiyou. Tuning the High-Efficiency Field-Free Current-Induced Deterministic Switching via Ultrathin PtMo Layer with Mo Content[J]. ADVANCED ELECTRONIC MATERIALS,2021,7(12):2100528. |
| APA | Bekele, Zelalem Abebe; Li, Runze; Li, Yucai; Cao, Yi; Liu, Xionghua; Wang, Kaiyou.(2021).Tuning the High-Efficiency Field-Free Current-Induced Deterministic Switching via Ultrathin PtMo Layer with Mo Content.ADVANCED ELECTRONIC MATERIALS,7(12),2100528. |
| MLA | Bekele, Zelalem Abebe; Li, Runze; Li, Yucai; Cao, Yi; Liu, Xionghua; Wang, Kaiyou."Tuning the High-Efficiency Field-Free Current-Induced Deterministic Switching via Ultrathin PtMo Layer with Mo Content".ADVANCED ELECTRONIC MATERIALS 7.12(2021):2100528. |
入库方式： OAI收割
来源：半导体研究所
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