Electronically induced defect creation at semiconductor/oxide interface revealed by time-dependent density functional theory
文献类型：期刊论文
| 作者 | Liu, Yue-Yang; Wei, Zhongming; Meng, Sheng; Wang, Runsheng; Jiang, Xiangwei; Huang, Ru; Li, Shu-Shen; Wang, Lin-Wang |
| 刊名 | PHYSICAL REVIEW B
 |
| 出版日期 | 2021 |
| 卷号 | 104期号:11页码:115310 |
| 公开日期 | 2021 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/30867]  |
| 专题 | 半导体研究所_半导体超晶格国家重点实验室 |
| 推荐引用方式 GB/T 7714 | Liu, Yue-Yang; Wei, Zhongming; Meng, Sheng; Wang, Runsheng; Jiang, Xiangwei; Huang, Ru; Li, Shu-Shen; Wang, Lin-Wang. Electronically induced defect creation at semiconductor/oxide interface revealed by time-dependent density functional theory[J]. PHYSICAL REVIEW B,2021,104(11):115310. |
| APA | Liu, Yue-Yang; Wei, Zhongming; Meng, Sheng; Wang, Runsheng; Jiang, Xiangwei; Huang, Ru; Li, Shu-Shen; Wang, Lin-Wang.(2021).Electronically induced defect creation at semiconductor/oxide interface revealed by time-dependent density functional theory.PHYSICAL REVIEW B,104(11),115310. |
| MLA | Liu, Yue-Yang; Wei, Zhongming; Meng, Sheng; Wang, Runsheng; Jiang, Xiangwei; Huang, Ru; Li, Shu-Shen; Wang, Lin-Wang."Electronically induced defect creation at semiconductor/oxide interface revealed by time-dependent density functional theory".PHYSICAL REVIEW B 104.11(2021):115310. |
入库方式： OAI收割
来源：半导体研究所
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