Enhanced in-plane ferroelectricity, antiferroelectricity, and unconventional 2D emergent fermions in quadruple-layer XSbO2 (X = Li, Na)†
文献类型：期刊论文
| 作者 | Guan, Shan; Zhang, GuangBiao; Liu, Chang |
| 刊名 | NANOSCALE
 |
| 出版日期 | 2021 |
| 卷号 | 13期号:45页码:19172-19180 |
| 公开日期 | 2021 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/30803]  |
| 专题 | 半导体研究所_半导体超晶格国家重点实验室 |
| 推荐引用方式 GB/T 7714 | Guan, Shan; Zhang, GuangBiao; Liu, Chang. Enhanced in-plane ferroelectricity, antiferroelectricity, and unconventional 2D emergent fermions in quadruple-layer XSbO2 (X = Li, Na)†[J]. NANOSCALE,2021,13(45):19172-19180. |
| APA | Guan, Shan; Zhang, GuangBiao; Liu, Chang.(2021).Enhanced in-plane ferroelectricity, antiferroelectricity, and unconventional 2D emergent fermions in quadruple-layer XSbO2 (X = Li, Na)†.NANOSCALE,13(45),19172-19180. |
| MLA | Guan, Shan; Zhang, GuangBiao; Liu, Chang."Enhanced in-plane ferroelectricity, antiferroelectricity, and unconventional 2D emergent fermions in quadruple-layer XSbO2 (X = Li, Na)†".NANOSCALE 13.45(2021):19172-19180. |
入库方式： OAI收割
来源：半导体研究所
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