中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Directly Confirming the Z (1/2) Center as the Electron Trap in SiC Through Accessing the Nonradiative Recombination

文献类型:期刊论文

作者Gu, Yuxiang;   Shi, Lin;   Luo, Jun-Wei;   Li, Shu-Shen;   Wang, Lin-Wang
刊名PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS
出版日期2021
卷号16期号:2页码:2100458
公开日期2021
源URL[http://ir.semi.ac.cn/handle/172111/30798]  
专题半导体研究所_半导体超晶格国家重点实验室
推荐引用方式
GB/T 7714
Gu, Yuxiang; Shi, Lin; Luo, Jun-Wei; Li, Shu-Shen; Wang, Lin-Wang. Directly Confirming the Z (1/2) Center as the Electron Trap in SiC Through Accessing the Nonradiative Recombination[J]. PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS,2021,16(2):2100458.
APA Gu, Yuxiang; Shi, Lin; Luo, Jun-Wei; Li, Shu-Shen; Wang, Lin-Wang.(2021).Directly Confirming the Z (1/2) Center as the Electron Trap in SiC Through Accessing the Nonradiative Recombination.PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS,16(2),2100458.
MLA Gu, Yuxiang; Shi, Lin; Luo, Jun-Wei; Li, Shu-Shen; Wang, Lin-Wang."Directly Confirming the Z (1/2) Center as the Electron Trap in SiC Through Accessing the Nonradiative Recombination".PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS 16.2(2021):2100458.

入库方式: OAI收割

来源:半导体研究所

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