中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Defects Induced Charge Trapping/Detrapping and Hysteresis Phenomenon in MoS2 Field-Effect Transistors: Mechanism Revealed by Anharmonic Marcus Charge Transfer Theory

文献类型:期刊论文

作者Ma, Xiaolei;   Liu, Yue-Yang;   Zeng, Lang;   Chen, Jiezhi;   Wang, Runsheng;   Wang, Lin-Wang;   Wu, Yanqing;   Jiang, Xiangwei
刊名ACS APPLIED MATERIALS & INTERFACES
出版日期2021
卷号14期号:1页码:2185–2193
公开日期2021
源URL[http://ir.semi.ac.cn/handle/172111/30725]  
专题半导体研究所_半导体超晶格国家重点实验室
推荐引用方式
GB/T 7714
Ma, Xiaolei; Liu, Yue-Yang; Zeng, Lang; Chen, Jiezhi; Wang, Runsheng; Wang, Lin-Wang; Wu, Yanqing; Jiang, Xiangwei. Defects Induced Charge Trapping/Detrapping and Hysteresis Phenomenon in MoS2 Field-Effect Transistors: Mechanism Revealed by Anharmonic Marcus Charge Transfer Theory[J]. ACS APPLIED MATERIALS & INTERFACES,2021,14(1):2185–2193.
APA Ma, Xiaolei; Liu, Yue-Yang; Zeng, Lang; Chen, Jiezhi; Wang, Runsheng; Wang, Lin-Wang; Wu, Yanqing; Jiang, Xiangwei.(2021).Defects Induced Charge Trapping/Detrapping and Hysteresis Phenomenon in MoS2 Field-Effect Transistors: Mechanism Revealed by Anharmonic Marcus Charge Transfer Theory.ACS APPLIED MATERIALS & INTERFACES,14(1),2185–2193.
MLA Ma, Xiaolei; Liu, Yue-Yang; Zeng, Lang; Chen, Jiezhi; Wang, Runsheng; Wang, Lin-Wang; Wu, Yanqing; Jiang, Xiangwei."Defects Induced Charge Trapping/Detrapping and Hysteresis Phenomenon in MoS2 Field-Effect Transistors: Mechanism Revealed by Anharmonic Marcus Charge Transfer Theory".ACS APPLIED MATERIALS & INTERFACES 14.1(2021):2185–2193.

入库方式: OAI收割

来源:半导体研究所

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