Effects of heavy ion irradiation on Cu/Al2O3/Pt CBRAM devices
文献类型：期刊论文
| 作者 | Chaohui Su3; Linbo Shan3; Dongliang Yang3; Yanfei Zhao3; Yujun Fu3; Jiande Liu2,3; Guangan Zhang1 ; Qi Wang3; Deyan He3
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| 刊名 | Microelectronic Engineering
 |
| 出版日期 | 2021-07-27 |
| 期号 | 247页码:111600 |
| WOS记录号 | WOS:000683574400007 |
| 源URL | [http://ir.licp.cn/handle/362003/28010]  |
| 专题 | 兰州化学物理研究所_固体润滑国家重点实验室 |
| 通讯作者 | Qi Wang |
| 作者单位 | 1.Key Laboratory of Solid Lubrication, Lanzhou Institute of Chemicals Physics, Chinese Academy of Sciences 2.Institute of Modern Physics, Chinese Academy of Sciences 3.School of Physical Science and Technology, Lanzhou University |
| 推荐引用方式 GB/T 7714 | Chaohui Su,Linbo Shan,Dongliang Yang,et al. Effects of heavy ion irradiation on Cu/Al2O3/Pt CBRAM devices[J]. Microelectronic Engineering,2021(247):111600. |
| APA | Chaohui Su.,Linbo Shan.,Dongliang Yang.,Yanfei Zhao.,Yujun Fu.,...&Deyan He.(2021).Effects of heavy ion irradiation on Cu/Al2O3/Pt CBRAM devices.Microelectronic Engineering(247),111600. |
| MLA | Chaohui Su,et al."Effects of heavy ion irradiation on Cu/Al2O3/Pt CBRAM devices".Microelectronic Engineering .247(2021):111600. |
入库方式： OAI收割
来源：兰州化学物理研究所
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