In-plane ferroelectricity in few-layered GeS and its van der Waals ferroelectric diodes†
文献类型：期刊论文
| 作者 | Yan, Yong; Deng, Qunrui; Li, Shasha; Guo, Tao; Li, Xueping; Jiang, Yurong; Song, Xiaohui; Huang, Wen; Yang, Juehan; Xia, Congxin |
| 刊名 | NANOSCALE
 |
| 出版日期 | 2021 |
| 卷号 | 13期号:38页码:16122-16130 |
| 公开日期 | 2021 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/30899]  |
| 专题 | 半导体研究所_半导体超晶格国家重点实验室 |
| 推荐引用方式 GB/T 7714 | Yan, Yong; Deng, Qunrui; Li, Shasha; Guo, Tao; Li, Xueping; Jiang, Yurong; Song, Xiaohui; Huang, Wen; Yang, Juehan; Xia, Congxin. In-plane ferroelectricity in few-layered GeS and its van der Waals ferroelectric diodes†[J]. NANOSCALE,2021,13(38):16122-16130. |
| APA | Yan, Yong; Deng, Qunrui; Li, Shasha; Guo, Tao; Li, Xueping; Jiang, Yurong; Song, Xiaohui; Huang, Wen; Yang, Juehan; Xia, Congxin.(2021).In-plane ferroelectricity in few-layered GeS and its van der Waals ferroelectric diodes†.NANOSCALE,13(38),16122-16130. |
| MLA | Yan, Yong; Deng, Qunrui; Li, Shasha; Guo, Tao; Li, Xueping; Jiang, Yurong; Song, Xiaohui; Huang, Wen; Yang, Juehan; Xia, Congxin."In-plane ferroelectricity in few-layered GeS and its van der Waals ferroelectric diodes†".NANOSCALE 13.38(2021):16122-16130. |
入库方式： OAI收割
来源：半导体研究所
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