Growth and characteristics of beta-Ga2O3 thin films on sapphire (0001) by low pressure chemical vapour deposition
文献类型：期刊论文
| 作者 | Jiao, Yujia; Jiang, Qian; Meng, Junhua; Zhao, Jinliang; Yin, Zhigang; Gao, Hongli; Zhang, Jing; Deng, Jinxiang; Zhang, Xingwang |
| 刊名 | VACUUM
 |
| 出版日期 | 2021 |
| 卷号 | 189页码:110253 |
| 公开日期 | 2021 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/30913]  |
| 专题 | 半导体研究所_中科院半导体材料科学重点实验室 |
| 推荐引用方式 GB/T 7714 | Jiao, Yujia; Jiang, Qian; Meng, Junhua; Zhao, Jinliang; Yin, Zhigang; Gao, Hongli; Zhang, Jing; Deng, Jinxiang; Zhang, Xingwang. Growth and characteristics of beta-Ga2O3 thin films on sapphire (0001) by low pressure chemical vapour deposition[J]. VACUUM,2021,189:110253. |
| APA | Jiao, Yujia; Jiang, Qian; Meng, Junhua; Zhao, Jinliang; Yin, Zhigang; Gao, Hongli; Zhang, Jing; Deng, Jinxiang; Zhang, Xingwang.(2021).Growth and characteristics of beta-Ga2O3 thin films on sapphire (0001) by low pressure chemical vapour deposition.VACUUM,189,110253. |
| MLA | Jiao, Yujia; Jiang, Qian; Meng, Junhua; Zhao, Jinliang; Yin, Zhigang; Gao, Hongli; Zhang, Jing; Deng, Jinxiang; Zhang, Xingwang."Growth and characteristics of beta-Ga2O3 thin films on sapphire (0001) by low pressure chemical vapour deposition".VACUUM 189(2021):110253. |
入库方式： OAI收割
来源：半导体研究所
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