中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Growth and characteristics of beta-Ga2O3 thin films on sapphire (0001) by low pressure chemical vapour deposition

文献类型:期刊论文

AuthorJiao, Yujia;   Jiang, Qian;   Meng, Junhua;   Zhao, Jinliang;   Yin, Zhigang;   Gao, Hongli;   Zhang, Jing;   Deng, Jinxiang;   Zhang, Xingwang
SourceVACUUM
Issued Date2021
Volume189Pages:110253
Available Date2021
源URL[http://ir.semi.ac.cn/handle/172111/30913]  
Collection半导体研究所_中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
Jiao, Yujia; Jiang, Qian; Meng, Junhua; Zhao, Jinliang; Yin, Zhigang; Gao, Hongli; Zhang, Jing; Deng, Jinxiang; Zhang, Xingwang. Growth and characteristics of beta-Ga2O3 thin films on sapphire (0001) by low pressure chemical vapour deposition[J]. VACUUM,2021,189:110253.
APA Jiao, Yujia; Jiang, Qian; Meng, Junhua; Zhao, Jinliang; Yin, Zhigang; Gao, Hongli; Zhang, Jing; Deng, Jinxiang; Zhang, Xingwang.(2021).Growth and characteristics of beta-Ga2O3 thin films on sapphire (0001) by low pressure chemical vapour deposition.VACUUM,189,110253.
MLA Jiao, Yujia; Jiang, Qian; Meng, Junhua; Zhao, Jinliang; Yin, Zhigang; Gao, Hongli; Zhang, Jing; Deng, Jinxiang; Zhang, Xingwang."Growth and characteristics of beta-Ga2O3 thin films on sapphire (0001) by low pressure chemical vapour deposition".VACUUM 189(2021):110253.

入库方式: OAI收割

来源:半导体研究所

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