High-Performance Broadband Photodetectors Based on n-MoS2/p-Ge0.9Sn0.1 Heterojunctions
文献类型：期刊论文
| 作者 | Shu, Kaixiang; Gao, Wei; Wan, Fengshuo; Yang, Shuhui; Dan, Zhiying; Wu, Liangwei; Zhao, Qixiao; Xue, Chunlai; Huo, Nengjie; Li, Jingbo |
| 刊名 | ACS APPLIED ELECTRONIC MATERIALS
 |
| 出版日期 | 2021 |
| 卷号 | 3期号:7页码:3218-3225 |
| 公开日期 | 2021 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/30920]  |
| 专题 | 半导体研究所_光电子研究发展中心 |
| 推荐引用方式 GB/T 7714 | Shu, Kaixiang; Gao, Wei; Wan, Fengshuo; Yang, Shuhui; Dan, Zhiying; Wu, Liangwei; Zhao, Qixiao; Xue, Chunlai; Huo, Nengjie; Li, Jingbo. High-Performance Broadband Photodetectors Based on n-MoS2/p-Ge0.9Sn0.1 Heterojunctions[J]. ACS APPLIED ELECTRONIC MATERIALS,2021,3(7):3218-3225. |
| APA | Shu, Kaixiang; Gao, Wei; Wan, Fengshuo; Yang, Shuhui; Dan, Zhiying; Wu, Liangwei; Zhao, Qixiao; Xue, Chunlai; Huo, Nengjie; Li, Jingbo.(2021).High-Performance Broadband Photodetectors Based on n-MoS2/p-Ge0.9Sn0.1 Heterojunctions.ACS APPLIED ELECTRONIC MATERIALS,3(7),3218-3225. |
| MLA | Shu, Kaixiang; Gao, Wei; Wan, Fengshuo; Yang, Shuhui; Dan, Zhiying; Wu, Liangwei; Zhao, Qixiao; Xue, Chunlai; Huo, Nengjie; Li, Jingbo."High-Performance Broadband Photodetectors Based on n-MoS2/p-Ge0.9Sn0.1 Heterojunctions".ACS APPLIED ELECTRONIC MATERIALS 3.7(2021):3218-3225. |
入库方式： OAI收割
来源：半导体研究所
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