Large Perpendicular Magnetic Anisotropy in Ta/CoFeB/MgO on Full-Coverage Monolayer MoS2 and First-Principles Study of Its Electronic Structure
文献类型：期刊论文
| 作者 | Zhou, Ziqi; Marcon, Paul; Devaux, Xavier; Pigeat, Philippe; Bouche, Alexandre; Migot, Sylvie; Jaafar, Abdallah; Arras, Remi; Vergnat, Michel; Ren, Lei; Tornatzky, Hans; Robert, Cedric; Marie, Xavier; George, Jean-Marie; Jaffres, Henri-Yves; Stoffel, Mathie |
| 刊名 | ACS APPLIED MATERIALS & INTERFACES
 |
| 出版日期 | 2021 |
| 卷号 | 13期号:27页码:32579-32589 |
| 公开日期 | 2021 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/30915]  |
| 专题 | 半导体研究所_半导体超晶格国家重点实验室 |
| 推荐引用方式 GB/T 7714 | Zhou, Ziqi; Marcon, Paul; Devaux, Xavier; Pigeat, Philippe; Bouche, Alexandre; Migot, Sylvie; Jaafar, Abdallah; Arras, Remi; Vergnat, Michel; Ren, Lei; Tornatzky, Hans; Robert, Cedric; Marie, Xavier; George, Jean-Marie; Jaffres, Henri-Yves; Stoffel, Mathie. Large Perpendicular Magnetic Anisotropy in Ta/CoFeB/MgO on Full-Coverage Monolayer MoS2 and First-Principles Study of Its Electronic Structure[J]. ACS APPLIED MATERIALS & INTERFACES,2021,13(27):32579-32589. |
| APA | Zhou, Ziqi; Marcon, Paul; Devaux, Xavier; Pigeat, Philippe; Bouche, Alexandre; Migot, Sylvie; Jaafar, Abdallah; Arras, Remi; Vergnat, Michel; Ren, Lei; Tornatzky, Hans; Robert, Cedric; Marie, Xavier; George, Jean-Marie; Jaffres, Henri-Yves; Stoffel, Mathie.(2021).Large Perpendicular Magnetic Anisotropy in Ta/CoFeB/MgO on Full-Coverage Monolayer MoS2 and First-Principles Study of Its Electronic Structure.ACS APPLIED MATERIALS & INTERFACES,13(27),32579-32589. |
| MLA | Zhou, Ziqi; Marcon, Paul; Devaux, Xavier; Pigeat, Philippe; Bouche, Alexandre; Migot, Sylvie; Jaafar, Abdallah; Arras, Remi; Vergnat, Michel; Ren, Lei; Tornatzky, Hans; Robert, Cedric; Marie, Xavier; George, Jean-Marie; Jaffres, Henri-Yves; Stoffel, Mathie."Large Perpendicular Magnetic Anisotropy in Ta/CoFeB/MgO on Full-Coverage Monolayer MoS2 and First-Principles Study of Its Electronic Structure".ACS APPLIED MATERIALS & INTERFACES 13.27(2021):32579-32589. |
入库方式： OAI收割
来源：半导体研究所
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