中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Photoexcited carrier dynamics of thin film Cd3As2 grown on a GaAs(111)B substrate by molecular beam epitaxy

文献类型:期刊论文

作者Zhai, Guihao;   Ma, Jialin;   Wang, Hailong;   Ye, Jialiang;   Li, Ting;   Li, Ying;   Liang, Gaoming;   Zhao, Jianhua;   Wu, Xiaoguang;   Zhang, Xinhui
刊名PHYSICAL REVIEW B
出版日期2021
卷号104期号:9页码:94302
公开日期2021
源URL[http://ir.semi.ac.cn/handle/172111/30932]  
专题半导体研究所_半导体超晶格国家重点实验室
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GB/T 7714
Zhai, Guihao; Ma, Jialin; Wang, Hailong; Ye, Jialiang; Li, Ting; Li, Ying; Liang, Gaoming; Zhao, Jianhua; Wu, Xiaoguang; Zhang, Xinhui. Photoexcited carrier dynamics of thin film Cd3As2 grown on a GaAs(111)B substrate by molecular beam epitaxy[J]. PHYSICAL REVIEW B,2021,104(9):94302.
APA Zhai, Guihao; Ma, Jialin; Wang, Hailong; Ye, Jialiang; Li, Ting; Li, Ying; Liang, Gaoming; Zhao, Jianhua; Wu, Xiaoguang; Zhang, Xinhui.(2021).Photoexcited carrier dynamics of thin film Cd3As2 grown on a GaAs(111)B substrate by molecular beam epitaxy.PHYSICAL REVIEW B,104(9),94302.
MLA Zhai, Guihao; Ma, Jialin; Wang, Hailong; Ye, Jialiang; Li, Ting; Li, Ying; Liang, Gaoming; Zhao, Jianhua; Wu, Xiaoguang; Zhang, Xinhui."Photoexcited carrier dynamics of thin film Cd3As2 grown on a GaAs(111)B substrate by molecular beam epitaxy".PHYSICAL REVIEW B 104.9(2021):94302.

入库方式: OAI收割

来源:半导体研究所

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