We demonstrate that strong stimulated Raman scattering in silicon and germanium microresonators can induce stable and breathing dark pulses generation circumventing traditional complex approaches such as pump modulation and mode coupling. Although multi-photon absorption shows a small influence on the detuning value for stable dark pulse excitation, the concomitant free carrier will assist dark pulse excitation and broaden the excitation area of dark pulse thus making it easier to capture stable pulse. Furthermore, dark breather dynamics in Si and Ge are also observed, which shows distinct properties from the dark soliton breathers dominated solely by Kerr effect. Finally, we show that octave spanning mid-infrared (MIR) microcomb can be generated combining with high-order dispersion engineering, which in turn affects the breathing dynamics of dark pulses. Our findings provide another way for the initiation of dark pulses in group IV materials and broadband MIR microcomb generation for spectroscopy applications.