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Giant Tunneling Electroresistance Induced by Interfacial Doping in Pt/BaTiO3/Pt Ferroelectric Tunnel Junctions

文献类型：期刊论文

作者Xiao, Wei5,6,7; Kang, Lili4; Hao, Hua7; Zhou, Yanhong3; Zheng, Xiaohong5,6,7; Zhang, Lei1,2; Zeng, Zhi6,7
刊名PHYSICAL REVIEW APPLIED
出版日期2022-04-01
卷号17
ISSN号2331-7019
DOI10.1103/PhysRevApplied.17.044001
通讯作者Zheng, Xiaohong(xhzheng@theory.issp.ac.cn)
英文摘要Ferroelectric tunnel junctions (FTJs) are very promising candidates for nonvolatile memory devices and a large tunneling electroresistance (TER) ratio is essential for their high performance. This work intends to achieve large TER ratio by interfacial doping in FTJs by taking Pt/BaTiO3/Pt tunnel junctions as an example. By introducing Na (or Li) substitutions for Ti atoms at the right interface, the resultant strong Coulomb repulsion from the negatively charged NaO2 interface pushes the electrons to higher energy in an increasing manner from left to right in the whole BaTiO3 barrier, which leads to rapidly increasing potential energy profile and partial metallization close to the right interface in the left polarization state. However, in the right polarization state, since the right ferroelectric polarization produces a decreasing potential energy profile from left to right, although the NaO2 interface also pushes the electrons to much higher energy and the slope of the potential energy profile changes from negative to positive, the final slope of the potential energy profile is much less steeper and the Fermi level is always inside the band gap, leading to a completely insulating state. The substantially different distributions of the electrostatic potential energy profile in the two polarization states lead to great differences in the transport properties. Based on density-functional-theory calculations, a TER ratio up to 10(5)% is achieved. The results indicate that a negatively charged interface based on interfacial substitution is a promising method for obtaining a large TER ratio in FTJs, and thus will have implications for the further understanding and design of high-performance FTJs.
WOS关键词TRANSITION ; THICKNESS ; PHYSICS
资助项目National Natural Science Foundation of China[11974355] ; National Natural Science Foundation of China[12074230] ; National Key R&D Program of China[2017YFA0304203] ; Shanxi Province 100-Plan Talent Program ; Fund for Shanxi 1331 Project ; Natural Science Foundation of Jiangxi Province[20202ACBL212005]
WOS研究方向Physics
语种英语
出版者AMER PHYSICAL SOC
WOS记录号WOS:000782846800003
资助机构National Natural Science Foundation of China ; National Key R&D Program of China ; Shanxi Province 100-Plan Talent Program ; Fund for Shanxi 1331 Project ; Natural Science Foundation of Jiangxi Province
源URL[http://ir.hfcas.ac.cn:8080/handle/334002/128565]  
专题中国科学院合肥物质科学研究院
通讯作者Zheng, Xiaohong
作者单位1.Shanxi Univ, Collaborat Innovat Ctr Extreme Opt, Taiyuan 030006, Peoples R China
2.Shanxi Univ, Inst Laser Spect, State Key Lab Quantum Opt & Quantum Opt Devices, Taiyuan 030006, Peoples R China
3.East China Jiao Tong Univ, Coll Sci, Nanchang 330013, Jiangxi, Peoples R China
4.Henan Univ, Sch Phys & Elect, Inst Computat Mat Sci, Kaifeng 475004, Peoples R China
5.Nanjing Forestry Univ, Coll Informat Sci & Technol, Nanjing 210037, Peoples R China
6.Univ Sci & Technol China, Grad Sch, Sci Isl Branch, Hefei 230026, Peoples R China
7.Chinese Acad Sci, HFIPS, Inst Solid State Phys, Key Lab Mat Phys, Hefei 230031, Peoples R China
推荐引用方式
GB/T 7714		 Xiao, Wei,Kang, Lili,Hao, Hua,et al. Giant Tunneling Electroresistance Induced by Interfacial Doping in Pt/BaTiO3/Pt Ferroelectric Tunnel Junctions[J]. PHYSICAL REVIEW APPLIED,2022,17.
APA Xiao, Wei.,Kang, Lili.,Hao, Hua.,Zhou, Yanhong.,Zheng, Xiaohong.,...&Zeng, Zhi.(2022).Giant Tunneling Electroresistance Induced by Interfacial Doping in Pt/BaTiO3/Pt Ferroelectric Tunnel Junctions.PHYSICAL REVIEW APPLIED,17.
MLA Xiao, Wei,et al."Giant Tunneling Electroresistance Induced by Interfacial Doping in Pt/BaTiO3/Pt Ferroelectric Tunnel Junctions".PHYSICAL REVIEW APPLIED 17(2022).

入库方式： OAI收割

来源：合肥物质科学研究院

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