Evaluation of interfacial misfit strain field of heterostructures using STEM nano secondary moire method
文献类型：期刊论文
| 作者 | Zhao, Yao5 ; Yang, Yang4; Wen, Huihui3; Liu, Chao2; Huang, Xianfu1; Liu, Zhanwei5; Huang XF(黄先富); Huang XF(黄先富); Huang XF(黄先富)
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| 刊名 | PHYSICAL CHEMISTRY CHEMICAL PHYSICS
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| 出版日期 | 2022-02-21 |
| 页码 | 7 |
| ISSN号 | 1463-9076 |
| DOI | 10.1039/d1cp05891f |
| 通讯作者 | Huang, Xianfu(huangxf@imech.ac.cn) ; Liu, Zhanwei(liuzw@bit.edu.cn) |
| 英文摘要 | STEM nano-moire can achieve high-precision deformation measurement in a large field of view. In scanning moire fringe technology, the scanning line and magnification of the existing transmission electron microscope (TEM) cannot be changed continuously. The frequency of the crystal lattice is often difficult to match with the fixed frequency of the scanning line, resulting in mostly too dense fringes that cannot be directly observed; thus, the calculation error is relatively large. This problem exists in both the STEM moire method and the multiplication moire method. Herein, we propose the STEM secondary nano-moire method, i.e., a digital grating of similar frequency is superimposed on or sampling the primary moire fringe or multiplication moire to form the secondary moire. The formation principle of the secondary moire is analyzed in detail, with deduced theoretical relations for measuring the strain of STEM secondary nano-moire fringe. The advantages of sampling secondary moire and digital secondary moire are compared. The optimal sampling interpolation function is obtained through error analysis. This method expands the application range of the STEM moire method and has better practicability. Finally, the STEM secondary nano-moire is used to accurately measure the strain field at the Si/Ge heterostructure interface, and the theoretical strain field calculated by the dislocation model is analyzed and compared. The obtained results are more compatible with the P-N dislocation model. Our work provides a practical method for the accurate evaluation of the interface characteristics of heterostructures, which is an important basis for judging the photoelectric performance of the entire device and the optimal design of the heterostructures. |
| WOS关键词 | SAMPLING MOIRE |
| 资助项目 | National Natura Science Foundation of China[11972084] ; National Science and Technology Major Project[2017-V1-0003-0073] ; Beijing Natural Science Foundation[1192014] |
| WOS研究方向 | Chemistry ; Physics |
| 语种 | 英语 |
| WOS记录号 | WOS:000764254700001 |
| 资助机构 | National Natura Science Foundation of China ; National Science and Technology Major Project ; Beijing Natural Science Foundation |
| 源URL | [http://dspace.imech.ac.cn/handle/311007/88724]  |
| 专题 | 力学研究所_非线性力学国家重点实验室 |
| 通讯作者 | Huang, Xianfu; Liu, Zhanwei |
| 作者单位 | 1.Chinese Acad Sci, Inst Mech, State Key Lab Nonlinear Mech LNM, Beijing 100190, Peoples R China 2.Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China 3.Hebei Univ Sci & Technol, Sch Elect Engn, Shijiazhuang 050018, Hebei, Peoples R China 4.AECC Beijing Inst Aeronaut Mat, Beijing 100190, Peoples R China 5.Beijing Inst Technol, Sch Aerosp Engn, Beijing 100081, Peoples R China |
| 推荐引用方式 GB/T 7714 | Zhao, Yao,Yang, Yang,Wen, Huihui,et al. Evaluation of interfacial misfit strain field of heterostructures using STEM nano secondary moire method[J]. PHYSICAL CHEMISTRY CHEMICAL PHYSICS,2022:7. |
| APA | Zhao, Yao.,Yang, Yang.,Wen, Huihui.,Liu, Chao.,Huang, Xianfu.,...&Huang XF.(2022).Evaluation of interfacial misfit strain field of heterostructures using STEM nano secondary moire method.PHYSICAL CHEMISTRY CHEMICAL PHYSICS,7. |
| MLA | Zhao, Yao,et al."Evaluation of interfacial misfit strain field of heterostructures using STEM nano secondary moire method".PHYSICAL CHEMISTRY CHEMICAL PHYSICS (2022):7. |
入库方式： OAI收割
来源：力学研究所
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