中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Effect of geometric position on the film properties for a complex-shaped substrate in HiPIMS discharge: Experiment and simulation

文献类型:期刊论文

作者Li Hua5; Luo Yang5; Han Mingyue5; Tang Ling5; Gu Jiabin5; Li Guodong3,4; Deng Dachen5; Liu Hongtao2; Huang Kai1; Li Liuhe5
刊名SURFACE & COATINGS TECHNOLOGY
出版日期2022-03-25
卷号434页码:10
关键词HiPIMS Shadowing effect Ion dynamics 2D PIC-MCC
ISSN号0257-8972
DOI10.1016/j.surfcoat.2022.128196
通讯作者Li Guodong(lgd@imech.ac.cn) ; Li Liuhe(Liliuhe@buaa.edu.cn)
英文摘要The purpose of this paper is to explore the effect of geometric position on the film properties for a complex shaped substrate in high-power impulse magnetron sputtering (HiPIMS) discharge. The substrate is a trapezoidal prism, whose base has four inner corners of 60?degrees, 120 degrees, 75 degrees, and 105 degrees. A negative bias is added to this trapezoidal prism during the high-density discharge to deposit TiAlSiN films. The chemical compositions, microstructures and mechanical properties of the films at different area of the substrate are analyzed using the energy dispersive spectroscopy, X-ray diffraction, scanning electron microscope, nano-indentor and Vickers indentation tester. Systematic investigations demonstrate that the films properties have prominent differences on various planes of the trapezoidal-prism sample, due to the so-called shadowing effect. Compared with the measurements on the plane perpendicular to the target surface, there is a higher average hardness and stronger toughness on the plane facing to the target surface. However, the values of both the hardness and toughness are the lowest on the plane facing away from the target surface. Moreover, even for the same plane, the enhanced mechanical properties as well as a smoother surface and denser microstructure appear in the edge regions, with respect to that in the planar center regions. To understand these interesting phenomena, a two-dimensional particle-in-cell/Monte Carlo collision simulation (2D PIC-MCC) and Transport of Ions in Matter method (TRIM) are employed to explore the ion dynamics at the different sites of the sample. Simulation results suggest that a higher ion flux density and larger re-sputtering rate may contribute to the improved film properties in the edge regions. These results in this paper are important for broadening the industrial applications of high ion fraction plasma sources in irregular structures, especially for cutting tools.
WOS关键词PHYSICAL VAPOR-DEPOSITION ; MECHANICAL-PROPERTIES ; TRIBOLOGICAL PROPERTIES ; NANOCOMPOSITE COATINGS ; CUTTING PERFORMANCE ; SHEATH STRUCTURE ; SHARP EDGES ; TIN FILMS ; MAGNETRON ; MICROSTRUCTURE
资助项目National Science and Tech-nology Major Project[2017-VII-0012-0108] ; National Science and Tech-nology Major Project[2017-VII-0003-0096]
WOS研究方向Materials Science ; Physics
语种英语
WOS记录号WOS:000779411900003
资助机构National Science and Tech-nology Major Project
源URL[http://dspace.imech.ac.cn/handle/311007/88838]  
专题宽域飞行工程科学与应用中心
通讯作者Li Guodong; Li Liuhe
作者单位1.Chinese Acad Sci, Inst Elect Engn, Beijing, Peoples R China
2.Beijing Inst Aero space Control Devices, Beijing, Peoples R China
3.Chinese Acad Sci, Inst Mech, Beijing, Peoples R China
4.Univ Chinese Acad Sci, Sch Engn Sci, Beijing, Peoples R China
5.Beihang Univ, Sch Mech Engn & Automat, Dept Mat Proc & Control Engn, Beijing, Peoples R China
推荐引用方式
GB/T 7714
Li Hua,Luo Yang,Han Mingyue,et al. Effect of geometric position on the film properties for a complex-shaped substrate in HiPIMS discharge: Experiment and simulation[J]. SURFACE & COATINGS TECHNOLOGY,2022,434:10.
APA Li Hua.,Luo Yang.,Han Mingyue.,Tang Ling.,Gu Jiabin.,...&Li Liuhe.(2022).Effect of geometric position on the film properties for a complex-shaped substrate in HiPIMS discharge: Experiment and simulation.SURFACE & COATINGS TECHNOLOGY,434,10.
MLA Li Hua,et al."Effect of geometric position on the film properties for a complex-shaped substrate in HiPIMS discharge: Experiment and simulation".SURFACE & COATINGS TECHNOLOGY 434(2022):10.

入库方式: OAI收割

来源:力学研究所

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