E/D-Mode GaN Inverter on a 150-mm Si Wafer Based on p-GaN Gate E-Mode HEMT Technology
文献类型：期刊论文
| 作者 | Jia, Li-Fang; Zhang, Lian; Xiao, Jin-Ping; Cheng, Zhe; Lin, De-Feng; Ai, Yu-Jie; Zhao, Jin-Chao; Zhang, Yun |
| 刊名 | MICROMACHINES
 |
| 出版日期 | 2021 |
| 卷号 | 12期号:6页码:617 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/30956]  |
| 专题 | 半导体研究所_固态光电信息技术实验室 |
| 推荐引用方式 GB/T 7714 | Jia, Li-Fang; Zhang, Lian; Xiao, Jin-Ping; Cheng, Zhe; Lin, De-Feng; Ai, Yu-Jie; Zhao, Jin-Chao; Zhang, Yun. E/D-Mode GaN Inverter on a 150-mm Si Wafer Based on p-GaN Gate E-Mode HEMT Technology[J]. MICROMACHINES,2021,12(6):617. |
| APA | Jia, Li-Fang; Zhang, Lian; Xiao, Jin-Ping; Cheng, Zhe; Lin, De-Feng; Ai, Yu-Jie; Zhao, Jin-Chao; Zhang, Yun.(2021).E/D-Mode GaN Inverter on a 150-mm Si Wafer Based on p-GaN Gate E-Mode HEMT Technology.MICROMACHINES,12(6),617. |
| MLA | Jia, Li-Fang; Zhang, Lian; Xiao, Jin-Ping; Cheng, Zhe; Lin, De-Feng; Ai, Yu-Jie; Zhao, Jin-Chao; Zhang, Yun."E/D-Mode GaN Inverter on a 150-mm Si Wafer Based on p-GaN Gate E-Mode HEMT Technology".MICROMACHINES 12.6(2021):617. |
入库方式： OAI收割
来源：半导体研究所
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