Epitaxial growth of ZrSe2 nanosheets on sapphire via chemical vapor deposition for optoelectronic application
文献类型：期刊论文
| 作者 | Tian, Yan; Zheng, Maoyuan; Cheng, Yong; Yin, Zhigang; Jiang, Ji; Wang, Gaokai; Chen, Jingren; Li, Xingxing; Qi, Jing; Zhang, Xingwang |
| 刊名 | JOURNAL OF MATERIALS CHEMISTRY C
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| 出版日期 | 2021 |
| 卷号 | 9期号:39页码:13954-13962 |
| 公开日期 | 2021 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/30983]  |
| 专题 | 半导体研究所_中科院半导体材料科学重点实验室 |
| 推荐引用方式 GB/T 7714 | Tian, Yan; Zheng, Maoyuan; Cheng, Yong; Yin, Zhigang; Jiang, Ji; Wang, Gaokai; Chen, Jingren; Li, Xingxing; Qi, Jing; Zhang, Xingwang. Epitaxial growth of ZrSe2 nanosheets on sapphire via chemical vapor deposition for optoelectronic application[J]. JOURNAL OF MATERIALS CHEMISTRY C,2021,9(39):13954-13962. |
| APA | Tian, Yan; Zheng, Maoyuan; Cheng, Yong; Yin, Zhigang; Jiang, Ji; Wang, Gaokai; Chen, Jingren; Li, Xingxing; Qi, Jing; Zhang, Xingwang.(2021).Epitaxial growth of ZrSe2 nanosheets on sapphire via chemical vapor deposition for optoelectronic application.JOURNAL OF MATERIALS CHEMISTRY C,9(39),13954-13962. |
| MLA | Tian, Yan; Zheng, Maoyuan; Cheng, Yong; Yin, Zhigang; Jiang, Ji; Wang, Gaokai; Chen, Jingren; Li, Xingxing; Qi, Jing; Zhang, Xingwang."Epitaxial growth of ZrSe2 nanosheets on sapphire via chemical vapor deposition for optoelectronic application".JOURNAL OF MATERIALS CHEMISTRY C 9.39(2021):13954-13962. |
入库方式： OAI收割
来源：半导体研究所
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