Extraction of the Trench Sidewall Capacitances in an n-Type 4H-SiC Trench Metal-Oxide-Semiconductor Structure
文献类型：期刊论文
| 作者 | Guo, Zhiyu; Wu, Jingmin; Tian, Run; Wang, Fengxuan; Xu, Pengfei; Yang, Xiang; Fan, Zhongchao; Yang, Fuhua; He, Zhi |
| 刊名 | IEEE TRANSACTIONS ON ELECTRON DEVICES
 |
| 出版日期 | 2021 |
| 卷号 | 68期号:6页码:2879-2885 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/30995]  |
| 专题 | 半导体研究所_半导体集成技术工程研究中心 |
| 推荐引用方式 GB/T 7714 | Guo, Zhiyu; Wu, Jingmin; Tian, Run; Wang, Fengxuan; Xu, Pengfei; Yang, Xiang; Fan, Zhongchao; Yang, Fuhua; He, Zhi. Extraction of the Trench Sidewall Capacitances in an n-Type 4H-SiC Trench Metal-Oxide-Semiconductor Structure[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES,2021,68(6):2879-2885. |
| APA | Guo, Zhiyu; Wu, Jingmin; Tian, Run; Wang, Fengxuan; Xu, Pengfei; Yang, Xiang; Fan, Zhongchao; Yang, Fuhua; He, Zhi.(2021).Extraction of the Trench Sidewall Capacitances in an n-Type 4H-SiC Trench Metal-Oxide-Semiconductor Structure.IEEE TRANSACTIONS ON ELECTRON DEVICES,68(6),2879-2885. |
| MLA | Guo, Zhiyu; Wu, Jingmin; Tian, Run; Wang, Fengxuan; Xu, Pengfei; Yang, Xiang; Fan, Zhongchao; Yang, Fuhua; He, Zhi."Extraction of the Trench Sidewall Capacitances in an n-Type 4H-SiC Trench Metal-Oxide-Semiconductor Structure".IEEE TRANSACTIONS ON ELECTRON DEVICES 68.6(2021):2879-2885. |
入库方式： OAI收割
来源：半导体研究所
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