Simulation of a Parallel Dual-Metal-Gate Structure for AlGaN/GaN High-Electron-Mobility Transistor High-Linearity Applications
文献类型：期刊论文
| 作者 | Jia, Yeting; Wang, Quan; Chen, Changxi; Feng, Chun; Li, Wei; Jiang, Lijuan; Xiao, Hongling; Wang, Qian; Xu, Xiangang; Wang, Xiaoliang |
| 刊名 | PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
 |
| 出版日期 | 2021 |
| 卷号 | 218期号:18页码:2100151 |
| 公开日期 | 2021 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/31017]  |
| 专题 | 半导体研究所_中科院半导体材料科学重点实验室 |
| 推荐引用方式 GB/T 7714 | Jia, Yeting; Wang, Quan; Chen, Changxi; Feng, Chun; Li, Wei; Jiang, Lijuan; Xiao, Hongling; Wang, Qian; Xu, Xiangang; Wang, Xiaoliang. Simulation of a Parallel Dual-Metal-Gate Structure for AlGaN/GaN High-Electron-Mobility Transistor High-Linearity Applications[J]. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE,2021,218(18):2100151. |
| APA | Jia, Yeting; Wang, Quan; Chen, Changxi; Feng, Chun; Li, Wei; Jiang, Lijuan; Xiao, Hongling; Wang, Qian; Xu, Xiangang; Wang, Xiaoliang.(2021).Simulation of a Parallel Dual-Metal-Gate Structure for AlGaN/GaN High-Electron-Mobility Transistor High-Linearity Applications.PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE,218(18),2100151. |
| MLA | Jia, Yeting; Wang, Quan; Chen, Changxi; Feng, Chun; Li, Wei; Jiang, Lijuan; Xiao, Hongling; Wang, Qian; Xu, Xiangang; Wang, Xiaoliang."Simulation of a Parallel Dual-Metal-Gate Structure for AlGaN/GaN High-Electron-Mobility Transistor High-Linearity Applications".PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE 218.18(2021):2100151. |
入库方式： OAI收割
来源：半导体研究所
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