Regulation of Hole Concentration and Mobility and First-Principle Analysis of Mg-Doping in InGaN Grown by MOCVD
文献类型：期刊论文
| 作者 | Zhang, Lian; Wang, Rong; Liu, Zhe; Cheng, Zhe; Tong, Xiaodong; Xu, Jianxing; Zhang, Shiyong; Zhang, Yun; Chen, Fengxiang |
| 刊名 | MATERIALS
 |
| 出版日期 | 2021 |
| 卷号 | 14期号:18页码:5339 |
| 公开日期 | 2021 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/31054]  |
| 专题 | 半导体研究所_固态光电信息技术实验室 |
| 推荐引用方式 GB/T 7714 | Zhang, Lian; Wang, Rong; Liu, Zhe; Cheng, Zhe; Tong, Xiaodong; Xu, Jianxing; Zhang, Shiyong; Zhang, Yun; Chen, Fengxiang. Regulation of Hole Concentration and Mobility and First-Principle Analysis of Mg-Doping in InGaN Grown by MOCVD[J]. MATERIALS,2021,14(18):5339. |
| APA | Zhang, Lian; Wang, Rong; Liu, Zhe; Cheng, Zhe; Tong, Xiaodong; Xu, Jianxing; Zhang, Shiyong; Zhang, Yun; Chen, Fengxiang.(2021).Regulation of Hole Concentration and Mobility and First-Principle Analysis of Mg-Doping in InGaN Grown by MOCVD.MATERIALS,14(18),5339. |
| MLA | Zhang, Lian; Wang, Rong; Liu, Zhe; Cheng, Zhe; Tong, Xiaodong; Xu, Jianxing; Zhang, Shiyong; Zhang, Yun; Chen, Fengxiang."Regulation of Hole Concentration and Mobility and First-Principle Analysis of Mg-Doping in InGaN Grown by MOCVD".MATERIALS 14.18(2021):5339. |
入库方式： OAI收割
来源：半导体研究所
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