Pulsed Laser Annealing of Phosphorous-Implanted 4H-SiC: Electrical and Structural Characteristics
文献类型：期刊论文
| 作者 | Wu, Jingmin; He, Zhi; Guo, Zhiyu; Tian, Run; Wang, Fengxuan; Liu, Min; Yang, Xiang; Fan, Zhongchao; Yang, Fuhua |
| 刊名 | JOURNAL OF ELECTRONIC MATERIALS
 |
| 出版日期 | 2021 |
| 卷号 | 51期号:1页码:172-178 |
| 公开日期 | 2021 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/31058]  |
| 专题 | 半导体研究所_半导体集成技术工程研究中心 |
| 推荐引用方式 GB/T 7714 | Wu, Jingmin; He, Zhi; Guo, Zhiyu; Tian, Run; Wang, Fengxuan; Liu, Min; Yang, Xiang; Fan, Zhongchao; Yang, Fuhua. Pulsed Laser Annealing of Phosphorous-Implanted 4H-SiC: Electrical and Structural Characteristics[J]. JOURNAL OF ELECTRONIC MATERIALS,2021,51(1):172-178. |
| APA | Wu, Jingmin; He, Zhi; Guo, Zhiyu; Tian, Run; Wang, Fengxuan; Liu, Min; Yang, Xiang; Fan, Zhongchao; Yang, Fuhua.(2021).Pulsed Laser Annealing of Phosphorous-Implanted 4H-SiC: Electrical and Structural Characteristics.JOURNAL OF ELECTRONIC MATERIALS,51(1),172-178. |
| MLA | Wu, Jingmin; He, Zhi; Guo, Zhiyu; Tian, Run; Wang, Fengxuan; Liu, Min; Yang, Xiang; Fan, Zhongchao; Yang, Fuhua."Pulsed Laser Annealing of Phosphorous-Implanted 4H-SiC: Electrical and Structural Characteristics".JOURNAL OF ELECTRONIC MATERIALS 51.1(2021):172-178. |
入库方式： OAI收割
来源：半导体研究所
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