New mechanisms of cavity facet degradation for GaN-based laser diodes
文献类型:期刊论文
作者 | Wang, Xiao-Wei; Liu, Zong-Shun; Zhao, De-Gang; Chen, Ping; Liang, Feng; Yang, Jing |
刊名 | JOURNAL OF APPLIED PHYSICS |
出版日期 | 2021 |
卷号 | 129期号:22页码:223106 |
公开日期 | 2021 |
源URL | [http://ir.semi.ac.cn/handle/172111/31013] |
专题 | 半导体研究所_光电子研究发展中心 |
推荐引用方式 GB/T 7714 | Wang, Xiao-Wei; Liu, Zong-Shun; Zhao, De-Gang; Chen, Ping; Liang, Feng; Yang, Jing. New mechanisms of cavity facet degradation for GaN-based laser diodes[J]. JOURNAL OF APPLIED PHYSICS,2021,129(22):223106. |
APA | Wang, Xiao-Wei; Liu, Zong-Shun; Zhao, De-Gang; Chen, Ping; Liang, Feng; Yang, Jing.(2021).New mechanisms of cavity facet degradation for GaN-based laser diodes.JOURNAL OF APPLIED PHYSICS,129(22),223106. |
MLA | Wang, Xiao-Wei; Liu, Zong-Shun; Zhao, De-Gang; Chen, Ping; Liang, Feng; Yang, Jing."New mechanisms of cavity facet degradation for GaN-based laser diodes".JOURNAL OF APPLIED PHYSICS 129.22(2021):223106. |
入库方式: OAI收割
来源:半导体研究所
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