中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
New mechanisms of cavity facet degradation for GaN-based laser diodes

文献类型:期刊论文

作者Wang, Xiao-Wei;   Liu, Zong-Shun;   Zhao, De-Gang;   Chen, Ping;   Liang, Feng;   Yang, Jing
刊名JOURNAL OF APPLIED PHYSICS
出版日期2021
卷号129期号:22页码:223106
公开日期2021
源URL[http://ir.semi.ac.cn/handle/172111/31013]  
专题半导体研究所_光电子研究发展中心
推荐引用方式
GB/T 7714
Wang, Xiao-Wei; Liu, Zong-Shun; Zhao, De-Gang; Chen, Ping; Liang, Feng; Yang, Jing. New mechanisms of cavity facet degradation for GaN-based laser diodes[J]. JOURNAL OF APPLIED PHYSICS,2021,129(22):223106.
APA Wang, Xiao-Wei; Liu, Zong-Shun; Zhao, De-Gang; Chen, Ping; Liang, Feng; Yang, Jing.(2021).New mechanisms of cavity facet degradation for GaN-based laser diodes.JOURNAL OF APPLIED PHYSICS,129(22),223106.
MLA Wang, Xiao-Wei; Liu, Zong-Shun; Zhao, De-Gang; Chen, Ping; Liang, Feng; Yang, Jing."New mechanisms of cavity facet degradation for GaN-based laser diodes".JOURNAL OF APPLIED PHYSICS 129.22(2021):223106.

入库方式: OAI收割

来源:半导体研究所

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