Ge0.95Sn0.05 Gate-All-Around p-Channel Metal-Oxide-Semiconductor Field-Effect Transistors with Sub-3 nm Nanowire Width
文献类型：期刊论文
| 作者 | Kang, Yuye; Xu, Shengqiang; Han, Kaizhen; Kong, Eugene Y-J; Song, Zhigang; Luo, Sheng; Kumar, Annie; Wang, Chengkuan; Fan, Weijun; Liang, Gengchiau; Gong, Xiao |
| 刊名 | NANO LETTERS
 |
| 出版日期 | 2021 |
| 卷号 | 21期号:13页码:5555-5563 |
| 公开日期 | 2021 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/31065]  |
| 专题 | 半导体研究所_半导体超晶格国家重点实验室 |
| 推荐引用方式 GB/T 7714 | Kang, Yuye; Xu, Shengqiang; Han, Kaizhen; Kong, Eugene Y-J; Song, Zhigang; Luo, Sheng; Kumar, Annie; Wang, Chengkuan; Fan, Weijun; Liang, Gengchiau; Gong, Xiao. Ge0.95Sn0.05 Gate-All-Around p-Channel Metal-Oxide-Semiconductor Field-Effect Transistors with Sub-3 nm Nanowire Width[J]. NANO LETTERS,2021,21(13):5555-5563. |
| APA | Kang, Yuye; Xu, Shengqiang; Han, Kaizhen; Kong, Eugene Y-J; Song, Zhigang; Luo, Sheng; Kumar, Annie; Wang, Chengkuan; Fan, Weijun; Liang, Gengchiau; Gong, Xiao.(2021).Ge0.95Sn0.05 Gate-All-Around p-Channel Metal-Oxide-Semiconductor Field-Effect Transistors with Sub-3 nm Nanowire Width.NANO LETTERS,21(13),5555-5563. |
| MLA | Kang, Yuye; Xu, Shengqiang; Han, Kaizhen; Kong, Eugene Y-J; Song, Zhigang; Luo, Sheng; Kumar, Annie; Wang, Chengkuan; Fan, Weijun; Liang, Gengchiau; Gong, Xiao."Ge0.95Sn0.05 Gate-All-Around p-Channel Metal-Oxide-Semiconductor Field-Effect Transistors with Sub-3 nm Nanowire Width".NANO LETTERS 21.13(2021):5555-5563. |
入库方式： OAI收割
来源：半导体研究所
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