Nonradiative Carrier Recombination Enhanced by Vacancy Defects in Ionic II-VI Semiconductors
文献类型：期刊论文
| 作者 | Guo, Dan; Qiu, Chen; Yang, Kaike; Deng, Hui-Xiong |
| 刊名 | PHYSICAL REVIEW APPLIED
 |
| 出版日期 | 2021 |
| 卷号 | 15期号:6页码:64025 |
| 公开日期 | 2021 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/31046]  |
| 专题 | 半导体研究所_半导体超晶格国家重点实验室 |
| 推荐引用方式 GB/T 7714 | Guo, Dan; Qiu, Chen; Yang, Kaike; Deng, Hui-Xiong. Nonradiative Carrier Recombination Enhanced by Vacancy Defects in Ionic II-VI Semiconductors[J]. PHYSICAL REVIEW APPLIED,2021,15(6):64025. |
| APA | Guo, Dan; Qiu, Chen; Yang, Kaike; Deng, Hui-Xiong.(2021).Nonradiative Carrier Recombination Enhanced by Vacancy Defects in Ionic II-VI Semiconductors.PHYSICAL REVIEW APPLIED,15(6),64025. |
| MLA | Guo, Dan; Qiu, Chen; Yang, Kaike; Deng, Hui-Xiong."Nonradiative Carrier Recombination Enhanced by Vacancy Defects in Ionic II-VI Semiconductors".PHYSICAL REVIEW APPLIED 15.6(2021):64025. |
入库方式： OAI收割
来源：半导体研究所
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