Interference-enhanced deep-ultraviolet Raman signals of hexagonal boron nitride flake and its underlying silicon substrate
文献类型：期刊论文
| 作者 | Liu, Tao; Lin, Miao-Ling; Leng, Yu-Chen; Cong, Xin; Zhang, Xin; Tan, Ping-Heng |
| 刊名 | JOURNAL OF RAMAN SPECTROSCOPY
 |
| 出版日期 | 2021 |
| 卷号 | 52期号:12页码:2160-2165 |
| 公开日期 | 2021 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/30992]  |
| 专题 | 半导体研究所_半导体超晶格国家重点实验室 |
| 推荐引用方式 GB/T 7714 | Liu, Tao; Lin, Miao-Ling; Leng, Yu-Chen; Cong, Xin; Zhang, Xin; Tan, Ping-Heng. Interference-enhanced deep-ultraviolet Raman signals of hexagonal boron nitride flake and its underlying silicon substrate[J]. JOURNAL OF RAMAN SPECTROSCOPY,2021,52(12):2160-2165. |
| APA | Liu, Tao; Lin, Miao-Ling; Leng, Yu-Chen; Cong, Xin; Zhang, Xin; Tan, Ping-Heng.(2021).Interference-enhanced deep-ultraviolet Raman signals of hexagonal boron nitride flake and its underlying silicon substrate.JOURNAL OF RAMAN SPECTROSCOPY,52(12),2160-2165. |
| MLA | Liu, Tao; Lin, Miao-Ling; Leng, Yu-Chen; Cong, Xin; Zhang, Xin; Tan, Ping-Heng."Interference-enhanced deep-ultraviolet Raman signals of hexagonal boron nitride flake and its underlying silicon substrate".JOURNAL OF RAMAN SPECTROSCOPY 52.12(2021):2160-2165. |
入库方式： OAI收割
来源：半导体研究所
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