Effects of gamma irradiation on GaN high-electron-mobility transistors characterized by the voltage-transient method
文献类型：期刊论文
| 作者 | Pan, Shijie; Feng, Shiwei; Li, Xuan; Zheng, Xiang; Lu, Xiaozhuang; Hu, Chaoxu; He, Xin; Bai, Kun; Zhou, Lixing; Zhang, Yamin |
| 刊名 | SEMICONDUCTOR SCIENCE AND TECHNOLOGY
 |
| 出版日期 | 2021 |
| 卷号 | 36期号:9页码:95011 |
| 公开日期 | 2021 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/30959]  |
| 专题 | 半导体研究所_半导体超晶格国家重点实验室 |
| 推荐引用方式 GB/T 7714 | Pan, Shijie; Feng, Shiwei; Li, Xuan; Zheng, Xiang; Lu, Xiaozhuang; Hu, Chaoxu; He, Xin; Bai, Kun; Zhou, Lixing; Zhang, Yamin. Effects of gamma irradiation on GaN high-electron-mobility transistors characterized by the voltage-transient method[J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY,2021,36(9):95011. |
| APA | Pan, Shijie; Feng, Shiwei; Li, Xuan; Zheng, Xiang; Lu, Xiaozhuang; Hu, Chaoxu; He, Xin; Bai, Kun; Zhou, Lixing; Zhang, Yamin.(2021).Effects of gamma irradiation on GaN high-electron-mobility transistors characterized by the voltage-transient method.SEMICONDUCTOR SCIENCE AND TECHNOLOGY,36(9),95011. |
| MLA | Pan, Shijie; Feng, Shiwei; Li, Xuan; Zheng, Xiang; Lu, Xiaozhuang; Hu, Chaoxu; He, Xin; Bai, Kun; Zhou, Lixing; Zhang, Yamin."Effects of gamma irradiation on GaN high-electron-mobility transistors characterized by the voltage-transient method".SEMICONDUCTOR SCIENCE AND TECHNOLOGY 36.9(2021):95011. |
入库方式： OAI收割
来源：半导体研究所
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