Exciton emission dynamics in single InAs/GaAs quantum dots due to the existence of plasmon-field-induced metastable states in the wetting layer
文献类型：期刊论文
| 作者 | Huang, Junhui; Chen, Hao; Zhuo, Zhiyao; Wang, Jian; Li, Shulun; Ding, Kun; Ni, Haiqiao; Niu, Zhichuan; Jiang, Desheng; Dou, Xiuming; Sun, Baoquan |
| 刊名 | CHINESE PHYSICS B
 |
| 出版日期 | 2021 |
| 卷号 | 30期号:9页码:97805 |
| 公开日期 | 2021 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/30989]  |
| 专题 | 半导体研究所_半导体超晶格国家重点实验室 |
| 推荐引用方式 GB/T 7714 | Huang, Junhui; Chen, Hao; Zhuo, Zhiyao; Wang, Jian; Li, Shulun; Ding, Kun; Ni, Haiqiao; Niu, Zhichuan; Jiang, Desheng; Dou, Xiuming; Sun, Baoquan. Exciton emission dynamics in single InAs/GaAs quantum dots due to the existence of plasmon-field-induced metastable states in the wetting layer[J]. CHINESE PHYSICS B,2021,30(9):97805. |
| APA | Huang, Junhui; Chen, Hao; Zhuo, Zhiyao; Wang, Jian; Li, Shulun; Ding, Kun; Ni, Haiqiao; Niu, Zhichuan; Jiang, Desheng; Dou, Xiuming; Sun, Baoquan.(2021).Exciton emission dynamics in single InAs/GaAs quantum dots due to the existence of plasmon-field-induced metastable states in the wetting layer.CHINESE PHYSICS B,30(9),97805. |
| MLA | Huang, Junhui; Chen, Hao; Zhuo, Zhiyao; Wang, Jian; Li, Shulun; Ding, Kun; Ni, Haiqiao; Niu, Zhichuan; Jiang, Desheng; Dou, Xiuming; Sun, Baoquan."Exciton emission dynamics in single InAs/GaAs quantum dots due to the existence of plasmon-field-induced metastable states in the wetting layer".CHINESE PHYSICS B 30.9(2021):97805. |
入库方式： OAI收割
来源：半导体研究所
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