Facet passivation process of high-power laser diodes by plasma cleaning and ZnO film
文献类型：期刊论文
| 作者 | Lan, Yu3,4; Yang, Guowen2,3,4 ; Zhao, Yuliang3,4; Liu, Yuxian3,4; Demir, Abdullah1
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| 刊名 | Applied Surface Science
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| 出版日期 | 2022-09-15 |
| 卷号 | 596 |
| ISSN号 | 01694332 |
| 关键词 | Laser diodes Facet passivation High reliability |
| DOI | 10.1016/j.apsusc.2022.153506 |
| 产权排序 | 1 |
| 英文摘要 | Passivation of dangling bonds at the cleaved mirror facet and its durability are fundamental features of semiconductor lasers to obtain reliable operation with a long device lifetime. The high non-radiative recombination activity of the surface states needs to be controlled to prevent the Fermi level pinning before the deposition of mirror coating materials. Here, we report the incorporation of plasma cleaning of the facet and ZnO film as a passivation layer for the fabrication of high-power semiconductor lasers. The Argon plasma cleaning process was investigated to eliminate surface contamination without damaging the cavity surface. The ZnO passivation films were systematically studied by varying the chamber pressure and sputtering power of the radio frequency (RF) sputter coating process. We obtained homogeneous and dense ZnO films with high surface quality and optical absorption coefficient of zero. By incorporating the optimum plasma cleaning and passivation layer parameters, GaAs-based laser devices with significantly improved catastrophic optical mirror damage (COMD) power were achieved. COMD threshold was increased from 11.9 W to 20.7 W. The life test results demonstrate no failure for facet cleaned and passivated devices for more than 500 h, confirming the long-term effectiveness of the process for actual device integration. © 2022 Elsevier B.V. |
| 语种 | 英语 |
| 出版者 | Elsevier B.V. |
| 源URL | [http://ir.opt.ac.cn/handle/181661/95894]  |
| 专题 | 西安光学精密机械研究所_瞬态光学技术国家重点实验室 |
| 作者单位 | 1.Bilkent University, UNAM - Institute of Materials Science and Nanotechnology, Ankara; 06800, Turkey 2.Dogain Laser Technology (Suzhou) Co., Ltd., Suzhou; 215123, China; 3.University of Chinese Academy of Sciences, Beijing; 100049, China; 4.State Key Laboratory of Transient Optics and Photonics, Xi'an Institute of Optics and Precision Mechanics, Chinese Academy of Sciences, Xi'an; 710119, China; |
| 推荐引用方式 GB/T 7714 | Lan, Yu,Yang, Guowen,Zhao, Yuliang,et al. Facet passivation process of high-power laser diodes by plasma cleaning and ZnO film[J]. Applied Surface Science,2022,596. |
| APA | Lan, Yu,Yang, Guowen,Zhao, Yuliang,Liu, Yuxian,&Demir, Abdullah.(2022).Facet passivation process of high-power laser diodes by plasma cleaning and ZnO film.Applied Surface Science,596. |
| MLA | Lan, Yu,et al."Facet passivation process of high-power laser diodes by plasma cleaning and ZnO film".Applied Surface Science 596(2022). |
入库方式： OAI收割
来源：西安光学精密机械研究所
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