Deposition, Characterization, and Modeling of Scandium-Doped Aluminum Nitride Thin Film for Piezoelectric Devices
文献类型：期刊论文
| 作者 | Q. Z. Zhang; M. Z. Chen; H. L. Liu; X. Y. Zhao; X. M. Qin; F. F. Wang; Y. X. Tang; K. H. Yeoh; K. H. Chew and X. J. Sun |
| 刊名 | Materials
 |
| 出版日期 | 2021 |
| 卷号 | 14期号:21页码:11 |
| DOI | 10.3390/ma14216437 |
| 英文摘要 | In this work, we systematically studied the deposition, characterization, and crystal structure modeling of ScAlN thin film. Measurements of the piezoelectric device's relevant material properties, such as crystal structure, crystallographic orientation, and piezoelectric response, were performed to characterize the Sc0.29Al0.71N thin film grown using pulsed DC magnetron sputtering. Crystal structure modeling of the ScAlN thin film is proposed and validated, and the structure-property relations are discussed. The investigation results indicated that the sputtered thin film using seed layer technique had a good crystalline quality and a clear grain boundary. In addition, the effective piezoelectric coefficient d(33) was up to 12.6 pC/N, and there was no wurtzite-to-rocksalt phase transition under high pressure. These good features demonstrated that the sputtered ScAlN is promising for application in high-coupling piezoelectric devices with high-pressure stability. |
| URL标识 | 查看原文 |
| 源URL | [http://ir.ciomp.ac.cn/handle/181722/65135]  |
| 专题 | 中国科学院长春光学精密机械与物理研究所 |
| 推荐引用方式 GB/T 7714 | Q. Z. Zhang,M. Z. Chen,H. L. Liu,et al. Deposition, Characterization, and Modeling of Scandium-Doped Aluminum Nitride Thin Film for Piezoelectric Devices[J]. Materials,2021,14(21):11. |
| APA | Q. Z. Zhang.,M. Z. Chen.,H. L. Liu.,X. Y. Zhao.,X. M. Qin.,...&K. H. Chew and X. J. Sun.(2021).Deposition, Characterization, and Modeling of Scandium-Doped Aluminum Nitride Thin Film for Piezoelectric Devices.Materials,14(21),11. |
| MLA | Q. Z. Zhang,et al."Deposition, Characterization, and Modeling of Scandium-Doped Aluminum Nitride Thin Film for Piezoelectric Devices".Materials 14.21(2021):11. |
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