Exploring Low Power and Ultrafast Memristor on p-Type van der Waals SnS
文献类型：期刊论文
| 作者 | X. F. Lu; Y. Zhang; N. Wang; S. Luo; K. Peng; L. Wang; H. Chen; W. Gao; X. H. Chen; Y. Bao |
| 刊名 | Nano Letters
 |
| 出版日期 | 2021 |
| 卷号 | 21期号:20页码:8800-8807 |
| ISSN号 | 15306984 |
| DOI | 10.1021/acs.nanolett.1c03169 |
| 英文摘要 | Memristor devices that exhibit high integration density, fast speed, and low power consumption are candidates for neuromorphic devices. Here, we demonstrate a filament-based memristor using p-type SnS as the resistive switching material, exhibiting superlative metrics such as a switching voltage 0.2 V, a switching speed faster than 1.5 ns, high endurance switching cycles, and an ultralarge on/off ratio of 108. The device exhibits a power consumption as low as 100 fJ per switch. Chip-level simulations of the memristor based on 32 32 high-density crossbar arrays with 50 nm feature size reveal on-chip learning accuracy of 87.76% (close to the ideal software accuracy 90%) for CIFAR-10 image classifications. The ultrafast and low energy switching of p-type SnS compared to n-type transition metal dichalcogenides is attributed to the presence of cation vacancies and van der Waals gap that lower the activation barrier for Ag ion migration. 2021 American Chemical Society. |
| URL标识 | 查看原文 |
| 源URL | [http://ir.ciomp.ac.cn/handle/181722/65235]  |
| 专题 | 中国科学院长春光学精密机械与物理研究所 |
| 推荐引用方式 GB/T 7714 | X. F. Lu,Y. Zhang,N. Wang,et al. Exploring Low Power and Ultrafast Memristor on p-Type van der Waals SnS[J]. Nano Letters,2021,21(20):8800-8807. |
| APA | X. F. Lu.,Y. Zhang.,N. Wang.,S. Luo.,K. Peng.,...&G. Liang and K. P. Loh.(2021).Exploring Low Power and Ultrafast Memristor on p-Type van der Waals SnS.Nano Letters,21(20),8800-8807. |
| MLA | X. F. Lu,et al."Exploring Low Power and Ultrafast Memristor on p-Type van der Waals SnS".Nano Letters 21.20(2021):8800-8807. |
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