Optimized Selective-Area p-Type Diffusion for the Back-Illuminated Planar InGaAs/InP Avalanche Photodiodes by a Single Diffusion Process
文献类型：期刊论文
| 作者 | Y. R. Chen; Z. W. Zhang; G. Q. Miao; H. Jiang and H. Song |
| 刊名 | Physica Status Solidi a-Applications and Materials Science
 |
| 出版日期 | 2022 |
| 卷号 | 219期号:2页码:6 |
| ISSN号 | 1862-6300 |
| DOI | 10.1002/pssa.202100577 |
| 英文摘要 | Herein, an alternative approach of selective-area zinc diffusion technique by single rapid thermal diffusion (RTD) using a Zn3P2/Zn/SiO2 multilayer structure is proposed to realize p-type doping in the InP cap so as to fabricate planar InGaAs/InP avalanche photodiodes (APDs). Through the optimization of selective-area zinc diffusion in the InP cap, a low dark current, high responsivity, fast transient response, and high reliability near-infrared back-illuminated planar InGaAs/InP APD is obtained, which demonstrates a simple and efficient method for the development of high-performance planar InGaAs/InP APD focal plane arrays. |
| URL标识 | 查看原文 |
| 源URL | [http://ir.ciomp.ac.cn/handle/181722/65507]  |
| 专题 | 中国科学院长春光学精密机械与物理研究所 |
| 推荐引用方式 GB/T 7714 | Y. R. Chen,Z. W. Zhang,G. Q. Miao,et al. Optimized Selective-Area p-Type Diffusion for the Back-Illuminated Planar InGaAs/InP Avalanche Photodiodes by a Single Diffusion Process[J]. Physica Status Solidi a-Applications and Materials Science,2022,219(2):6. |
| APA | Y. R. Chen,Z. W. Zhang,G. Q. Miao,&H. Jiang and H. Song.(2022).Optimized Selective-Area p-Type Diffusion for the Back-Illuminated Planar InGaAs/InP Avalanche Photodiodes by a Single Diffusion Process.Physica Status Solidi a-Applications and Materials Science,219(2),6. |
| MLA | Y. R. Chen,et al."Optimized Selective-Area p-Type Diffusion for the Back-Illuminated Planar InGaAs/InP Avalanche Photodiodes by a Single Diffusion Process".Physica Status Solidi a-Applications and Materials Science 219.2(2022):6. |
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