Optoelectronic Performance of 2D WSe2 Field Effect Transistor
文献类型：期刊论文
| 作者 | F.-L. Xia; K.-X. Shi; D.-X. Zhao; Y.-P. Wang; Y. Fan and J.-H. Li |
| 刊名 | Faguang Xuebao/Chinese Journal of Luminescence
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| 出版日期 | 2021 |
| 卷号 | 42期号:2页码:257-263 |
| ISSN号 | 10007032 |
| DOI | 10.37188/CJL.20200374 |
| 英文摘要 | Since the graphene was found, with the continuous research and exploration by people, more and more two-dimensional materials with similar structures have been discovered and studied successively due to their excellent photoelectrical properties. The widespread attention is paid to the transition metal dichaldogenides(TMDs) due to their rich physical properties. This paper researches the two-dimensional three-layer WSe2 photoelectric property, and transfers it to the Au electrode of SiO2/Si substrate by Van Der Waals force. Finally, the silver paste is used to extract the back gate electrode with WSe2 field effect transistor manufactured, whose carrier mobility is 3.42 cm2/(Vs). The detector response ratio of the WSe2 field effect transistor based on the 630 nm wavelength is 0.61 A/W and the light response recovery time is 1 900 ms. 2021, Science Press. All right reserved. |
| URL标识 | 查看原文 |
| 源URL | [http://ir.ciomp.ac.cn/handle/181722/65508]  |
| 专题 | 中国科学院长春光学精密机械与物理研究所 |
| 推荐引用方式 GB/T 7714 | F.-L. Xia,K.-X. Shi,D.-X. Zhao,et al. Optoelectronic Performance of 2D WSe2 Field Effect Transistor[J]. Faguang Xuebao/Chinese Journal of Luminescence,2021,42(2):257-263. |
| APA | F.-L. Xia,K.-X. Shi,D.-X. Zhao,Y.-P. Wang,&Y. Fan and J.-H. Li.(2021).Optoelectronic Performance of 2D WSe2 Field Effect Transistor.Faguang Xuebao/Chinese Journal of Luminescence,42(2),257-263. |
| MLA | F.-L. Xia,et al."Optoelectronic Performance of 2D WSe2 Field Effect Transistor".Faguang Xuebao/Chinese Journal of Luminescence 42.2(2021):257-263. |
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