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Atomistic simulation toward real-scale microprocessor circuits

文献类型：期刊论文

作者Hou, Chaofeng1; Zhu, Aiqi1; Zhao, Mingcan1; Zhang, Shuai1,2; Ye, Yanhao1; Huang, Yufeng1; Xu, Ji1; Ge, Wei1
刊名CHEMICAL PHYSICS LETTERS
出版日期2022-03-16
卷号791页码:6
关键词Atomistic simulation Nano-transistor device Microprocessor circuit Functional module Thermal behavior
ISSN号0009-2614
DOI10.1016/j.cplett.2022.139389
英文摘要A highly efficient and novel atomistic simulation framework is first established for the thermal and mechanical behaviors of a whole microprocessor chip or its constituent functional modules, important for the performance and reliability of high-end microprocessor circuits. The largest simulated module contains about 55.3 thousand nano-transistors with around 107 billion atoms. Traditionally, the macroscopic continuous methods are difficult to treat nanoscale factors such as doping, thin dielectric layer, surface and interface in the nano-transistor devices, while the microscopic quantum mechanics method can only calculate one or several nano-transistors. This proposed simulation method realizes the integrated treatment of the above nanoscale factors and complex gate layout by coupling multiple interatomic potential models for different materials and designing efficient parallel algorithms, and bridges the mesoscale simulation gap between the aforementioned macroscopic and microscopic methods. The development provides the first atomic-scale simulation framework for predicting and modulating the thermal behavior of a microprocessor circuit or its functional module, which paves an exciting way to the atomic-resolution design of novel high-performance microprocessor chips in the post-Moore era.
WOS关键词SILICON ; ALGORITHMS ; EFFICIENT
资助项目Beijing Natural Science Foundation[JQ21034] ; Major Research Program of Henan Province[201400211300] ; National Natural Science Foundation of China (NSFC)[21776280] ; National Natural Science Foundation of China (NSFC)[22073103] ; National Natural Science Foundation of China (NSFC)[91934302] ; Strategic Priority Research Program of Chinese Academy of Sciences[XDC01040100] ; State Key Laboratory of Multiphase Complex Systems[MPCS-2021-A-02] ; Computer Network and Information Center of Chinese Academy of Sciences ; National Supercomputing Center of China at Zhengzhou
WOS研究方向Chemistry ; Physics
语种英语
WOS记录号WOS:000786594100003
出版者ELSEVIER
资助机构Beijing Natural Science Foundation ; Major Research Program of Henan Province ; National Natural Science Foundation of China (NSFC) ; Strategic Priority Research Program of Chinese Academy of Sciences ; State Key Laboratory of Multiphase Complex Systems ; Computer Network and Information Center of Chinese Academy of Sciences ; National Supercomputing Center of China at Zhengzhou
源URL[http://ir.ipe.ac.cn/handle/122111/52953]  
专题中国科学院过程工程研究所
通讯作者Hou, Chaofeng; Ge, Wei
作者单位1.Chinese Acad Sci, Inst Proc Engn, Beijing 100190, Peoples R China
2.Tianjin Univ, Sch Chem Engn & Technol, Tianjin 300350, Peoples R China
推荐引用方式
GB/T 7714		 Hou, Chaofeng,Zhu, Aiqi,Zhao, Mingcan,et al. Atomistic simulation toward real-scale microprocessor circuits[J]. CHEMICAL PHYSICS LETTERS,2022,791:6.
APA Hou, Chaofeng.,Zhu, Aiqi.,Zhao, Mingcan.,Zhang, Shuai.,Ye, Yanhao.,...&Ge, Wei.(2022).Atomistic simulation toward real-scale microprocessor circuits.CHEMICAL PHYSICS LETTERS,791,6.
MLA Hou, Chaofeng,et al."Atomistic simulation toward real-scale microprocessor circuits".CHEMICAL PHYSICS LETTERS 791(2022):6.

入库方式： OAI收割

来源：过程工程研究所

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