New selection rule of resonant Raman scattering in MoS2 monolayer under circular polarization
文献类型：期刊论文
| 作者 | Huang, Jianqi1,2; Liu, Zhiyong1,2; Yang, Teng1,2; Zhang, Zhidong1,2 |
| 刊名 | JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY
 |
| 出版日期 | 2022-03-10 |
| 卷号 | 102页码:132-136 |
| 关键词 | First principles calculation Resonant Raman Helicity selection rule MoS2 monolayer |
| ISSN号 | 1005-0302 |
| DOI | 10.1016/j.jmst.2021.05.080 |
| 通讯作者 | Yang, Teng(yangteng@imr.ac.cn) |
| 英文摘要 | The first-order resonant Raman spectra of monolayer MoS2 are calculated under the circularly polarized photoexcitation. The anomalously nonzero Raman intensity of the in-plane E mode under the (Z) over bar(sigma(+)sigma(+))Z or (Z) over bar(sigma(-)sigma(-))Z geometry, which goes against the conventional selection rule, appears under some circum- stances when optical absorption occurs at some special reciprocal points between the zone-center Gamma and the zone-edge-center M points. At that moment, the valley selectivity to the circular polarization is lifted. The analysis shows that the anomalous Raman intensity of the E mode for the same circularly polarized incident and scattered light is consistent with the pseudo-angular-momentum conservation law. The calculated E Raman tensor of monolayer MoS2 is found to vary with laser energy. The two diagonal terms of the Raman tensor change their signs from mutually opposite to the same when the relative intensity of the in-plane E mode to the out-of-plane A(1)' mode increases, indicating the increasingly important role played by the Frolich-type electron-phonon interaction over the deformation potential. Our study may shed new light on the understanding of the novel electron-photon process and assist in the design of new type of optoelectronic devices. (C) 2022 Published by Elsevier Ltd on behalf of The editorial office of Journal of Materials Science & Technology. |
| 资助项目 | National Natural Sci-ence Foundation of China[52031014] ; National Natural Sci-ence Foundation of China[51702146] ; National Key R&D Program of China[2017YFA0206301] |
| WOS研究方向 | Materials Science ; Metallurgy & Metallurgical Engineering |
| 语种 | 英语 |
| WOS记录号 | WOS:000778396100007 |
| 出版者 | JOURNAL MATER SCI TECHNOL |
| 资助机构 | National Natural Sci-ence Foundation of China ; National Key R&D Program of China |
| 源URL | [http://ir.imr.ac.cn/handle/321006/172933]  |
| 专题 | 金属研究所_中国科学院金属研究所 |
| 通讯作者 | Yang, Teng |
| 作者单位 | 1.Univ Sci & Technol China, Sch Mat Sci & Engn, Shenyang 110016, Peoples R China 2.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Peoples R China |
| 推荐引用方式 GB/T 7714 | Huang, Jianqi,Liu, Zhiyong,Yang, Teng,et al. New selection rule of resonant Raman scattering in MoS2 monolayer under circular polarization[J]. JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY,2022,102:132-136. |
| APA | Huang, Jianqi,Liu, Zhiyong,Yang, Teng,&Zhang, Zhidong.(2022).New selection rule of resonant Raman scattering in MoS2 monolayer under circular polarization.JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY,102,132-136. |
| MLA | Huang, Jianqi,et al."New selection rule of resonant Raman scattering in MoS2 monolayer under circular polarization".JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY 102(2022):132-136. |
入库方式： OAI收割
来源：金属研究所
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