A silicon-graphene-silicon transistor with an improved current gain
文献类型：期刊论文
| 作者 | Liu, Chi1; Yang, Xu-Qi1,2; Ma, Wei1,2; Wang, Xin-Zhe1,2; Jiang, Hai-Yan1,2; Ren, Wen-Cai1,2; Sun, Dong-Ming1,2 |
| 刊名 | JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY
 |
| 出版日期 | 2022-03-30 |
| 卷号 | 104页码:127-130 |
| 关键词 | Semiconductor metal semiconductor transistor Graphene base transistor Graphene base heterojunction transistor |
| ISSN号 | 1005-0302 |
| DOI | 10.1016/j.jmst.2021.06.061 |
| 通讯作者 | Sun, Dong-Ming(dmsun@imr.ac.cn) |
| 英文摘要 | In history, semiconductor-metal-semiconductor transistor (SMST) was proposed for frequency improve-ment. However, a general fabrication method is still missing due to the unsolved technological problem of deposition of a general crystalline semiconductor on metal, and a thinner metal base is also difficult to be fabricated with high quality. Recently, due to the atomic thickness of graphene, the concept of semiconductor-graphene-semiconductor transistor (SGST) has emerged which leads to the renaissance of SMST, however the experimental study is in its infancy. In this letter, SMST and SGST are fabricated using Si membrane transfer. It is found the common base current gain can be improved from about 0.5% in a Si-Au-Si transistor to about 1% in a Si-Gr-Ge one, and to above 10% in a Si-Gr-Si one, which is attributed to both the ultra-thin thickness and the quantum capacitance effect of graphene. (c) 2022 Published by Elsevier Ltd on behalf of The editorial office of Journal of Materials Science & Technology. |
| 资助项目 | National Natural Science Foundation of China[62074150] ; National Natural Science Foundation of China[61704175] ; Chinese Academy of Sciences (SYNL Young Talent Project)[SKLA-2019-03] |
| WOS研究方向 | Materials Science ; Metallurgy & Metallurgical Engineering |
| 语种 | 英语 |
| WOS记录号 | WOS:000773043300005 |
| 出版者 | JOURNAL MATER SCI TECHNOL |
| 资助机构 | National Natural Science Foundation of China ; Chinese Academy of Sciences (SYNL Young Talent Project) |
| 源URL | [http://ir.imr.ac.cn/handle/321006/172945]  |
| 专题 | 金属研究所_中国科学院金属研究所 |
| 通讯作者 | Sun, Dong-Ming |
| 作者单位 | 1.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, 72 Wenhua Rd, Shenyang 110016, Peoples R China 2.Univ Sci & Technol China, Sch Mat Sci & Engn, 72 Wenhua Rd, Shenyang 110016, Peoples R China |
| 推荐引用方式 GB/T 7714 | Liu, Chi,Yang, Xu-Qi,Ma, Wei,et al. A silicon-graphene-silicon transistor with an improved current gain[J]. JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY,2022,104:127-130. |
| APA | Liu, Chi.,Yang, Xu-Qi.,Ma, Wei.,Wang, Xin-Zhe.,Jiang, Hai-Yan.,...&Sun, Dong-Ming.(2022).A silicon-graphene-silicon transistor with an improved current gain.JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY,104,127-130. |
| MLA | Liu, Chi,et al."A silicon-graphene-silicon transistor with an improved current gain".JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY 104(2022):127-130. |
入库方式： OAI收割
来源：金属研究所
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