The effects of Eu3+ doping on the epitaxial growth and photovoltaic properties of BiFeO3 thin films
文献类型：期刊论文
| 作者 | Feng, Dingshuai1,2; Huang, Biaohong1,2; Li, Lingli1,2; Li, Xiaoqi1,2; Gu, Youdi1; Hu, Weijin1; Zhang, Zhidong1 |
| 刊名 | JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY
 |
| 出版日期 | 2022-04-20 |
| 卷号 | 106页码:49-55 |
| ISSN号 | 1005-0302 |
| 关键词 | Ferroelectric Photovoltaic effect BiFeO3 Eu3+ doping Band gap |
| DOI | 10.1016/j.jmst.2021.07.025 |
| 通讯作者 | Hu, Weijin(wjhu@imr.ac.cn) |
| 英文摘要 | Nowadays, photovoltaic effect has been widely studied in various ferroelectric materials due to its applications as optoelectronic devices. In this work, with BiFeO3 (BFO) films as the photovoltaic materials, we report the effects of Eu3+ doping content on the phase structure, ferroelectric and optical properties of BFO films grown on Ca0.96Ce0.04MnO3/YAlO3 (001) substrate. We found that a small doping level of 0.05 could induce a phase change of BFO from tetragonal to rhombohedral, due to the shrinking of the lattice upon Eu3+ doping and the breaking of surface terrace structure induced by Ca0.96Ce0.04MnO3 layer. This results in a sharp band gap reduction from 3.30 eV to 2.60 eV, and a decrease in the coercivity of ferroelectric polarization switching. Based on these findings, we investigate the photovoltaic effects of ITO/EuxBi1-xFeO3/Ca0.96Ce0.04MnO3 vertical capacitors. It is found that the short-circuit current density (J(sc)) decreases with increasing Eu3+ doping, whereas the open-circuit voltage (V-oc) first increases to a level of 0.1 V and then decreases with further Eu3+ doping. This could be explained by the combined effect of Schottky-junction and depolarization field on the photovoltaic process. Our research suggests that a moderate Eu3+ doping is helpful for enhancing the photovoltaic effect of BFO thin film devices. (C) 2022 Published by Elsevier Ltd on behalf of The editorial office of Journal of Materials Science & Technology. |
| 资助项目 | National Natural Science Foun-dation of China[61974147] ; National Natural Science Foun-dation of China[52031014] |
| WOS研究方向 | Materials Science ; Metallurgy & Metallurgical Engineering |
| 语种 | 英语 |
| 出版者 | JOURNAL MATER SCI TECHNOL |
| WOS记录号 | WOS:000780060300007 |
| 资助机构 | National Natural Science Foun-dation of China |
| 源URL | [http://ir.imr.ac.cn/handle/321006/172975]  |
| 专题 | 金属研究所_中国科学院金属研究所 |
| 通讯作者 | Hu, Weijin |
| 作者单位 | 1.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Peoples R China 2.Univ Sci & Technol China, Sch Mat Sci & Engn, Shenyang 110016, Peoples R China |
| 推荐引用方式 GB/T 7714 | Feng, Dingshuai,Huang, Biaohong,Li, Lingli,et al. The effects of Eu3+ doping on the epitaxial growth and photovoltaic properties of BiFeO3 thin films[J]. JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY,2022,106:49-55. |
| APA | Feng, Dingshuai.,Huang, Biaohong.,Li, Lingli.,Li, Xiaoqi.,Gu, Youdi.,...&Zhang, Zhidong.(2022).The effects of Eu3+ doping on the epitaxial growth and photovoltaic properties of BiFeO3 thin films.JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY,106,49-55. |
| MLA | Feng, Dingshuai,et al."The effects of Eu3+ doping on the epitaxial growth and photovoltaic properties of BiFeO3 thin films".JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY 106(2022):49-55. |
入库方式： OAI收割
来源：金属研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。