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Structure, Preparation, and Applications of 2D MaterialBased Metal-Semiconductor Heterostructures

文献类型：期刊论文

作者Tan, Junyang2,3; Li, Shisheng1; Liu, Bilu2,3; Cheng, Hui-Ming2,3,4
刊名SMALL STRUCTURES
出版日期2021
卷号2期号:1页码:20
关键词2D materials electronics energy metal-semiconductor heterostructures preparation structures
DOI10.1002/sstr.202000093
通讯作者Liu, Bilu(bilu.liu@sz.tsinghua.edu.cn) ; Cheng, Hui-Ming(hmcheng@sz.tsinghua.edu.cn)
英文摘要Two-dimensional (2D) materials' family with its many members and different properties has recently drawn great attention. Thanks to their atomic thickness and smooth surface, 2D materials can be constructed into heterostructures or homostructures in the fashion of out-of-plane perpendicular stacking or in-plane lateral stitching, resulting in unexpected physical and chemical properties and applications in many areas. In particular, 2D metal-semiconductor heterostructures or homostructures (MSHSs) which integrate 2D metals and 2D semiconductors, have shown great promise in future integrated electronics and energy-related applications. Herein, MSHSs with different structures and dimensionalities are first introduced, followed by several ways for their preparation. Their applications in electronics and optoelectronics, energy storage and conversion, and their use as platforms to exploit new physics are then discussed. Finally, the perspectives about the challenges and future research directions in this emerging field are given.
资助项目National Natural Science Foundation of China[51722206] ; National Natural Science Foundation of China[51920105002] ; National Natural Science Foundation of China[51991340] ; National Natural Science Foundation of China[51991343] ; Youth 1000-Talent Program of China, Guangdong Innovative and Entrepreneurial Research Team Program[2017ZT07C341] ; Bureau of Industry and Information Technology of Shenzhen[201901171523]
WOS研究方向Chemistry ; Science & Technology - Other Topics ; Materials Science
语种英语
WOS记录号WOS:000736588600012
出版者WILEY
资助机构National Natural Science Foundation of China ; Youth 1000-Talent Program of China, Guangdong Innovative and Entrepreneurial Research Team Program ; Bureau of Industry and Information Technology of Shenzhen
源URL[http://ir.imr.ac.cn/handle/321006/173838]  
专题金属研究所_中国科学院金属研究所
通讯作者Liu, Bilu; Cheng, Hui-Ming
作者单位1.Natl Inst Mat Sci, Int Ctr Young Scientists, Tsukuba, Ibaraki 3050044, Japan
2.Tsinghua Univ, Shenzhen Geim Graphene Ctr, Tsinghua Berkeley Shenzhen Inst, Shenzhen 518055, Peoples R China
3.Tsinghua Univ, Tsinghua Shenzhen Int Grad Sch, Shenzhen 518055, Peoples R China
4.Chinese Acad Sci, Shenyang Natl Lab Mat Sci, Inst Met Res, Shenyang 110016, Peoples R China
推荐引用方式
GB/T 7714		 Tan, Junyang,Li, Shisheng,Liu, Bilu,et al. Structure, Preparation, and Applications of 2D MaterialBased Metal-Semiconductor Heterostructures[J]. SMALL STRUCTURES,2021,2(1):20.
APA Tan, Junyang,Li, Shisheng,Liu, Bilu,&Cheng, Hui-Ming.(2021).Structure, Preparation, and Applications of 2D MaterialBased Metal-Semiconductor Heterostructures.SMALL STRUCTURES,2(1),20.
MLA Tan, Junyang,et al."Structure, Preparation, and Applications of 2D MaterialBased Metal-Semiconductor Heterostructures".SMALL STRUCTURES 2.1(2021):20.

入库方式： OAI收割

来源：金属研究所

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