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Self-assembled epitaxy of Ga2Se3 on the oxidized GaSe surface and atomic imaging of the Ga2Se3/GaSe heterostructure

文献类型：期刊论文

作者Liu, Jie1; Li, Jingwei2,3; Gu, Lixin4,5; Wu, Hong6,7; Han, Guang8; Wang, Dengkui9; Zhou, Jinfei2,3; Gong, Xiangnan1; Yang, Dingfeng10; Zheng, Sikang6,7
刊名APPLIED SURFACE SCIENCE
出版日期2022-06-01
卷号586页码:7
关键词GaSe bulk crystal & nbsp GaSe oxidized surface Ga2Se3/GaSe heterostructure Atomic imaging Van der Waals epitaxy
ISSN号0169-4332
DOI10.1016/j.apsusc.2022.152774
英文摘要Gallium selenides (GaSe and Ga2Se3) and their heterostructures have been widely concerned owing to their attractive properties and potential applications in the field of photoelectric and photocatalysis. In this work, we develop an unprecedented Ga2Se3/GaSe self-assembled heterostructure through thermal oxidation of GaSe. The crystal structure and defects of GaSe and Ga2Se3/GaSe heterostructure have been studied by advanced Cs-STEM imaging. The present bulk GaSe possesses epsilon-polytype as the dominant phase along with gamma-GaSe inclusions and structural defects, i.e., stacking faults, twins, and antisites. The Ga2Se3 layer, generated on the GaSe oxidized surface, exhibits a defective zincblende-like cubic structure where vacancies locally ordered on the {1 1 1} planes, which even results in superstructure domains. Furthermore, atomically van der Waals epitaxy and orientation relationships between Ga2Se3 and GaSe were revealed. Finally, the optical properties of Ga2Se3/GaSe hetero-structures were preliminary studied and future directions for the structural development and property investigation of Ga2Se3/GaSe heterostructures were also discussed. These findings are insightful for recognizing the microscopic structure of Ga(S)e and Ga2Se3/GaSe heterostructures and provide a valuable route for the generation of self-assembled heterostructures in other related layered semiconductors.
WOS关键词THIN-FILM ; MORPHOLOGY
资助项目National Natural Science Foundation of China[11904039] ; National Natural Science Foundation of China[52071041] ; Fundamental Research Funds for the Central Universities, China[2021CDJLXB006] ; Fundamental Research Funds for the Central Universities, China[2021CDJCGJ013]
WOS研究方向Chemistry ; Materials Science ; Physics
语种英语
WOS记录号WOS:000775599300002
出版者ELSEVIER
资助机构National Natural Science Foundation of China ; National Natural Science Foundation of China ; Fundamental Research Funds for the Central Universities, China ; Fundamental Research Funds for the Central Universities, China ; National Natural Science Foundation of China ; National Natural Science Foundation of China ; Fundamental Research Funds for the Central Universities, China ; Fundamental Research Funds for the Central Universities, China ; National Natural Science Foundation of China ; National Natural Science Foundation of China ; Fundamental Research Funds for the Central Universities, China ; Fundamental Research Funds for the Central Universities, China ; National Natural Science Foundation of China ; National Natural Science Foundation of China ; Fundamental Research Funds for the Central Universities, China ; Fundamental Research Funds for the Central Universities, China
源URL[http://ir.iggcas.ac.cn/handle/132A11/105086]  
专题地质与地球物理研究所_中国科学院地球与行星物理重点实验室
通讯作者Zhang, Bin
作者单位1.Chongqing Univ, Analyt & Testing Ctr, Chongqing 401331, Peoples R China
2.Chongqing Univ, Multiscale Porous Mat Ctr, Inst Adv Interdisciplinary Studies, Chongqing 400044, Peoples R China
3.Chongqing Univ, Sch Chem & Chem Engn, Chongqing 400044, Peoples R China
4.Chinese Acad Sci, Inst Geol & Geophys, Key Lab Earth & Planetary Phys, Beijing 100029, Peoples R China
5.Chinese Acad Sci, Inst Geol & Geophys, Elect Microscopy Lab, Beijing 100029, Peoples R China
6.Chongqing Univ, Ctr Quantum Mat & Devices, Chongqing 401331, Peoples R China
7.Chongqing Univ, Coll Phys, Chongqing 401331, Peoples R China
8.Chongqing Univ, Coll Mat Sci & Engn, Chongqing 400044, Peoples R China
9.Changchun Univ Sci & Technol, State Key Lab High Power Semicond Lasers, 7089 Wei Xing Rd, Changchun 130022, Jilin, Peoples R China
10.Chongqing Univ Technol, Coll Chem & Chem Engn, 69 Hongguang Rd, Chongqing 400054, Peoples R China
推荐引用方式
GB/T 7714		 Liu, Jie,Li, Jingwei,Gu, Lixin,et al. Self-assembled epitaxy of Ga2Se3 on the oxidized GaSe surface and atomic imaging of the Ga2Se3/GaSe heterostructure[J]. APPLIED SURFACE SCIENCE,2022,586:7.
APA Liu, Jie.,Li, Jingwei.,Gu, Lixin.,Wu, Hong.,Han, Guang.,...&Zhou, Xiaoyuan.(2022).Self-assembled epitaxy of Ga2Se3 on the oxidized GaSe surface and atomic imaging of the Ga2Se3/GaSe heterostructure.APPLIED SURFACE SCIENCE,586,7.
MLA Liu, Jie,et al."Self-assembled epitaxy of Ga2Se3 on the oxidized GaSe surface and atomic imaging of the Ga2Se3/GaSe heterostructure".APPLIED SURFACE SCIENCE 586(2022):7.

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来源：地质与地球物理研究所

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