BAlN for III-nitride UV light-emitting diodes: undoped electron blocking layer
文献类型：期刊论文
| 作者 | Gu, Wen; Lu, Yi; Lin, Rongyu; Guo, Wenzhe; Zhang, Zihui; Ryou, Jae-Hyun; Yan, Jianchang; Wang, Junxi; Li, Jinmin; Li, Xiaohang |
| 刊名 | JOURNAL OF PHYSICS D-APPLIED PHYSICS
 |
| 出版日期 | 2021 |
| 卷号 | 54期号:17页码:175104 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/31103]  |
| 专题 | 半导体研究所_中科院半导体照明研发中心 |
| 推荐引用方式 GB/T 7714 | Gu, Wen; Lu, Yi; Lin, Rongyu; Guo, Wenzhe; Zhang, Zihui; Ryou, Jae-Hyun; Yan, Jianchang; Wang, Junxi; Li, Jinmin; Li, Xiaohang. BAlN for III-nitride UV light-emitting diodes: undoped electron blocking layer[J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS,2021,54(17):175104. |
| APA | Gu, Wen; Lu, Yi; Lin, Rongyu; Guo, Wenzhe; Zhang, Zihui; Ryou, Jae-Hyun; Yan, Jianchang; Wang, Junxi; Li, Jinmin; Li, Xiaohang.(2021).BAlN for III-nitride UV light-emitting diodes: undoped electron blocking layer.JOURNAL OF PHYSICS D-APPLIED PHYSICS,54(17),175104. |
| MLA | Gu, Wen; Lu, Yi; Lin, Rongyu; Guo, Wenzhe; Zhang, Zihui; Ryou, Jae-Hyun; Yan, Jianchang; Wang, Junxi; Li, Jinmin; Li, Xiaohang."BAlN for III-nitride UV light-emitting diodes: undoped electron blocking layer".JOURNAL OF PHYSICS D-APPLIED PHYSICS 54.17(2021):175104. |
入库方式： OAI收割
来源：半导体研究所
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