Gate-controlled ambipolar transport in b-AsP crystals and their VIS-NIF photodetection
文献类型：期刊论文
| 作者 | Zhong, Mianzeng; Meng, Haotong; Ren, Zhihui; Huang, Le; Yang, Juehan; Li, Bo; Xia, Qinglin; Wang, Xiaoting; Wei, Zhongming; He, Jun |
| 刊名 | NANOSCALE
 |
| 出版日期 | 2021 |
| 卷号 | 13期号:23页码:10579-10586 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/31095]  |
| 专题 | 半导体研究所_半导体超晶格国家重点实验室 |
| 推荐引用方式 GB/T 7714 | Zhong, Mianzeng; Meng, Haotong; Ren, Zhihui; Huang, Le; Yang, Juehan; Li, Bo; Xia, Qinglin; Wang, Xiaoting; Wei, Zhongming; He, Jun. Gate-controlled ambipolar transport in b-AsP crystals and their VIS-NIF photodetection[J]. NANOSCALE,2021,13(23):10579-10586. |
| APA | Zhong, Mianzeng; Meng, Haotong; Ren, Zhihui; Huang, Le; Yang, Juehan; Li, Bo; Xia, Qinglin; Wang, Xiaoting; Wei, Zhongming; He, Jun.(2021).Gate-controlled ambipolar transport in b-AsP crystals and their VIS-NIF photodetection.NANOSCALE,13(23),10579-10586. |
| MLA | Zhong, Mianzeng; Meng, Haotong; Ren, Zhihui; Huang, Le; Yang, Juehan; Li, Bo; Xia, Qinglin; Wang, Xiaoting; Wei, Zhongming; He, Jun."Gate-controlled ambipolar transport in b-AsP crystals and their VIS-NIF photodetection".NANOSCALE 13.23(2021):10579-10586. |
入库方式： OAI收割
来源：半导体研究所
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