Selective area epitaxy of III-V nanostructure arrays and networks: Growth, applications, and future directions
文献类型:期刊论文
作者 | Yuan, Xiaoming; Pan, Dong; Zhou, Yijin; Zhang, Xutao; Peng, Kun; Zhao, Bijun; Deng, Mingtang; He, Jun; Tan, Hark Hoe; Jagadish, Chennupati |
刊名 | APPLIED PHYSICS REVIEWS |
出版日期 | 2021 |
卷号 | 8期号:2页码:21302 |
源URL | [http://ir.semi.ac.cn/handle/172111/31076] |
专题 | 半导体研究所_半导体超晶格国家重点实验室 |
推荐引用方式 GB/T 7714 | Yuan, Xiaoming; Pan, Dong; Zhou, Yijin; Zhang, Xutao; Peng, Kun; Zhao, Bijun; Deng, Mingtang; He, Jun; Tan, Hark Hoe; Jagadish, Chennupati. Selective area epitaxy of III-V nanostructure arrays and networks: Growth, applications, and future directions[J]. APPLIED PHYSICS REVIEWS,2021,8(2):21302. |
APA | Yuan, Xiaoming; Pan, Dong; Zhou, Yijin; Zhang, Xutao; Peng, Kun; Zhao, Bijun; Deng, Mingtang; He, Jun; Tan, Hark Hoe; Jagadish, Chennupati.(2021).Selective area epitaxy of III-V nanostructure arrays and networks: Growth, applications, and future directions.APPLIED PHYSICS REVIEWS,8(2),21302. |
MLA | Yuan, Xiaoming; Pan, Dong; Zhou, Yijin; Zhang, Xutao; Peng, Kun; Zhao, Bijun; Deng, Mingtang; He, Jun; Tan, Hark Hoe; Jagadish, Chennupati."Selective area epitaxy of III-V nanostructure arrays and networks: Growth, applications, and future directions".APPLIED PHYSICS REVIEWS 8.2(2021):21302. |
入库方式: OAI收割
来源:半导体研究所
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