Influence of low-temperature GaN-Cap layer thickness on the InGaN/GaN multiple quantum well structure and its luminescence
文献类型：期刊论文
| 作者 | Zhao, Yuntao; Li, Guanghui; Zhang, Shuai; Liang, Feng; Zhou, Mei; Zhao, Degang; Jiang, Desheng |
| 刊名 | OPTICAL MATERIALS EXPRESS
 |
| 出版日期 | 2021 |
| 卷号 | 11期号:5页码:1411-1419 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/31111]  |
| 专题 | 半导体研究所_光电子研究发展中心 |
| 推荐引用方式 GB/T 7714 | Zhao, Yuntao; Li, Guanghui; Zhang, Shuai; Liang, Feng; Zhou, Mei; Zhao, Degang; Jiang, Desheng. Influence of low-temperature GaN-Cap layer thickness on the InGaN/GaN multiple quantum well structure and its luminescence[J]. OPTICAL MATERIALS EXPRESS,2021,11(5):1411-1419. |
| APA | Zhao, Yuntao; Li, Guanghui; Zhang, Shuai; Liang, Feng; Zhou, Mei; Zhao, Degang; Jiang, Desheng.(2021).Influence of low-temperature GaN-Cap layer thickness on the InGaN/GaN multiple quantum well structure and its luminescence.OPTICAL MATERIALS EXPRESS,11(5),1411-1419. |
| MLA | Zhao, Yuntao; Li, Guanghui; Zhang, Shuai; Liang, Feng; Zhou, Mei; Zhao, Degang; Jiang, Desheng."Influence of low-temperature GaN-Cap layer thickness on the InGaN/GaN multiple quantum well structure and its luminescence".OPTICAL MATERIALS EXPRESS 11.5(2021):1411-1419. |
入库方式： OAI收割
来源：半导体研究所
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