中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
首页 机构 成果 学者
  
  1. CAS IR Grid
  2. 金属研究所
  3. 中国科学院金属研究所
Fermi-Level Depinning in Metal/Ge Junctions by Inserting a Carbon Nanotube Layer

文献类型：期刊论文

作者Wei, Yu-Ning2,3; Hu, Xian-Gang2,3; Zhang, Jian-Wei1; Tong, Bo2,3; Du, Jin-Hong2,3; Liu, Chang2,3; Sun, Dong-Ming2,3; Liu, Chi2,3
刊名SMALL
出版日期2022-05-13
页码7
ISSN号1613-6810
关键词carbon nanotube films Fermi-level pinning germanium metal-induced gap states ohmic contacts
DOI10.1002/smll.202201840
通讯作者Sun, Dong-Ming(dmsun@imr.ac.cn) ; Liu, Chi(chiliu@imr.ac.cn)
英文摘要Germanium (Ge)-based devices are recognized as one of the most promising next-generation technologies for extending Moore's law. However, one of the critical issues is Fermi-level pinning (FLP) at the metal/n-Ge interface, and the resulting large contact resistance seriously degrades their performance. The insertion of a thin layer is one main technique for FLP modulation; however, the contact resistance is still limited by the remaining barrier height and the resistance induced by the insertion layer. In addition, the proposed depinning mechanisms are also controversial. Here, the authors report a wafer-scale carbon nanotube (CNT) insertion method to alleviate FLP. The inserted conductive film reduces the effective Schottky barrier height without inducing a large resistance, leading to ohmic contact and the smallest contact resistance between a metal and a lightly doped n-Ge. These devices also indicate that the metal-induced gap states mechanism is responsible for the pinning. Based on the proposed technology, a wafer-scale planar diode array is fabricated at room temperature without using the traditional ion-implantation and annealing technology, achieving an on-to-off current ratio of 4.59 x 10(4). This work provides a new way of FLP modulation that helps to improve device performance with new materials.
资助项目National Natural Science Foundation of China[62074150] ; National Natural Science Foundation of China[61704175] ; National Natural Science Foundation of China[51625203] ; Chinese Academy of Sciences[SYNL2020] ; Chinese Academy of Sciences[SKLA-2019-03]
WOS研究方向Chemistry ; Science & Technology - Other Topics ; Materials Science ; Physics
语种英语
出版者WILEY-V C H VERLAG GMBH
WOS记录号WOS:000794260000001
资助机构National Natural Science Foundation of China ; Chinese Academy of Sciences
源URL[http://ir.imr.ac.cn/handle/321006/173917]  
专题金属研究所_中国科学院金属研究所
通讯作者Sun, Dong-Ming; Liu, Chi
作者单位1.Chinese Acad Sci, Changchun Inst Opt Fine Mech & Phys, State Key Lab Luminescence & Applicat, 3888 Dong Nanhu Rd, Changchun 130033, Peoples R China
2.Univ Sci & Technol China, Sch Mat Sci & Engn, 72 Wenhua Rd, Shenyang 110016, Peoples R China
3.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, 72 Wenhua Rd, Shenyang 110016, Peoples R China
推荐引用方式
GB/T 7714		 Wei, Yu-Ning,Hu, Xian-Gang,Zhang, Jian-Wei,et al. Fermi-Level Depinning in Metal/Ge Junctions by Inserting a Carbon Nanotube Layer[J]. SMALL,2022:7.
APA Wei, Yu-Ning.,Hu, Xian-Gang.,Zhang, Jian-Wei.,Tong, Bo.,Du, Jin-Hong.,...&Liu, Chi.(2022).Fermi-Level Depinning in Metal/Ge Junctions by Inserting a Carbon Nanotube Layer.SMALL,7.
MLA Wei, Yu-Ning,et al."Fermi-Level Depinning in Metal/Ge Junctions by Inserting a Carbon Nanotube Layer".SMALL (2022):7.

入库方式： OAI收割

来源：金属研究所

浏览0
下载0
收藏0
其他版本

除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。