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Interfacial reactions at Ga-21.5In-10Sn/Cu liquid-solid interfaces under isothermal and non-isothermal conditions

文献类型：期刊论文

作者Gao, Zhaoqing1,2,4; Wang, Chen4; Chai, Zhenbang3,4; Chen, Yinbo1,2; Shen, Chenyu3,4; Yao, Kai4; Zhao, Ning4; Wang, Yunpeng4; Ma, Haitao4
刊名MATERIALS CHEMISTRY AND PHYSICS
出版日期2022-04-15
卷号282页码:16
ISSN号0254-0584
关键词Intermetallics Microstructure Temperature gradient Preferred orientation

Ga-21-5In-10Sn alloys

 Interfaces
DOI10.1016/j.matchemphys.2022.125960
通讯作者Wang, Yunpeng(yunpengw@dlut.edu.cn) ; Ma, Haitao(htma@dlut.edu.cn)
英文摘要The present work investigated the effect of isothermal and non-isothermal conditions on the interfacial reactions at Ga-21.5In-10Sn/Cu interfaces. Increasing the isothermal temperature from 140 to 180 ?C, the growth mechanism of CuGa2 changed from mixed mechanism (reaction control and volume diffusion) to volume diffusion mechanism. At higher reaction temperature such as 220 and 260 ?C, the growth behavior of interfacial CuGa2 was controlled by grain diffusion regime. When the reaction temperature increased from 140 to 310 ?C, the morphology and the preferred orientation degree of CuGa2 plane was weakened while phase structure and preferred orientation of CuGa(2 & nbsp;)did not change. At the same hot end temperature, the temperature gradients induced by non-isothermal environment had no significant influence on the morphology of interfacial CuGa2. This study can provide the important information to determine the soldering process temperature for the sol-dering of Ga-based alloys/Cu system and will guide the design of Ga-based liquid alloys/Cu conductors for the flexible and wearable electronics.
资助项目National Natural Science Foundation of China[51871040]
WOS研究方向Materials Science
语种英语
出版者ELSEVIER SCIENCE SA
WOS记录号WOS:000793040500001
资助机构National Natural Science Foundation of China
源URL[http://ir.imr.ac.cn/handle/321006/173932]  
专题金属研究所_中国科学院金属研究所
通讯作者Wang, Yunpeng; Ma, Haitao
作者单位1.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Peoples R China
2.Univ Sci & Technol China, Sch Mat Sci & Engn, Shenyang 110016, Peoples R China
3.Tokyo Inst Technol, Dept Mat Sci & Engn, Tokyo 1528552, Japan
4.Dalian Univ Technol, Sch Mat Sci & Engn, Dalian 116024, Peoples R China
推荐引用方式
GB/T 7714		 Gao, Zhaoqing,Wang, Chen,Chai, Zhenbang,et al. Interfacial reactions at Ga-21.5In-10Sn/Cu liquid-solid interfaces under isothermal and non-isothermal conditions[J]. MATERIALS CHEMISTRY AND PHYSICS,2022,282:16.
APA Gao, Zhaoqing.,Wang, Chen.,Chai, Zhenbang.,Chen, Yinbo.,Shen, Chenyu.,...&Ma, Haitao.(2022).Interfacial reactions at Ga-21.5In-10Sn/Cu liquid-solid interfaces under isothermal and non-isothermal conditions.MATERIALS CHEMISTRY AND PHYSICS,282,16.
MLA Gao, Zhaoqing,et al."Interfacial reactions at Ga-21.5In-10Sn/Cu liquid-solid interfaces under isothermal and non-isothermal conditions".MATERIALS CHEMISTRY AND PHYSICS 282(2022):16.

入库方式： OAI收割

来源：金属研究所

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